Vertical gradient freeze growth of detector grade CdZnTeSe single crystals

Nag, Ritwik; Chaudhuri, Sandeep K.; Kleppinger, Joshua W.; Karadavut, OmerFaruk; Mandal, Krishna C.

doi:10.1016/j.jcrysgro.2022.126826

Title: Vertical gradient freeze growth of detector grade CdZnTeSe single crystals

Journal Article · 10 August 2022 · Journal of Crystal Growth

DOI: https://doi.org/10.1016/j.jcrysgro.2022.126826 · OSTI ID:2418305

Nag, Ritwik ^[1];

^[2]; Kleppinger, Joshua W. ^[2];

^[2];

^[2]

Univ. of South Carolina, Columbia, SC (United States); OSTI
Univ. of South Carolina, Columbia, SC (United States)

Here, we report the growth of detector grade Cd_0.9Zn_0.1Te_0.97Se_0.03 (CZTS) single crystals, a recently discovered quaternary semiconductor for room temperature radiation detection, by a vertical gradient freeze (VGF) method. VGF is a comparatively low-temperature growth method and avoids relative motion between the heater and the ampoule containing the precursor materials which minimizes any thermal drift or temperature fluctuations. As a result, CZTS single crystals with superior charge transport properties has been obtained. Growth of detector-grade CZTS single crystals using VGF method has not been reported yet. X-ray spectroscopy based elemental analysis showed that the grown crystals demonstrated the desired stoichiometry required for high resolution radiation detection. Planar detectors fabricated by deposition of gold contacts (~0.07 cm²) demonstrated high bulk resistivity ~10¹⁰ Ω-cm and a very low leakage current density of 2.8 × 10^–8 A/cm² at a bias of 100 V when measured at room temperature. The detectors showed excellent radiation response with 100 % charge collection efficiency when exposed to 5486 keV alpha particles. The electron mobility-lifetime (μτ) product was measured to be 3 × 10^–3 cm²/V using a single polarity Hecht analysis which is at par with the recently reported values measured in CZTS grown using conventional Bridgman or travelling heater method. The electron mobility has been calculated to be 964 cm²V^–1s^–1 using a time-of-flight (TOF) method, a substantial improvement over that obtained from conventionally grown CZTS single crystals.

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Research Organization:: Univ. of South Carolina, Columbia, SC (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE); USDOE Office of Nuclear Energy (NE), Nuclear Energy University Program (NEUP)

Grant/Contract Number:: NE0008662

OSTI ID:: 2418305

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 596; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
A1. Room temperature radiation detection
A2. Vertical gradient freeze (VGF) method
B1. CdZnTeSe (CZTS)
B3. Charge transport properties
B3. Semiconductor detectors

Title: Vertical gradient freeze growth of detector grade CdZnTeSe single crystals

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