Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

Ho, Wan Ying; Chow, Yi Chao; Nakamura, Shuji; Peretti, Jacques; Weisbuch, Claude; Speck, James S.

doi:10.1063/5.0150029

Title: Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

Journal Article · 21 May 2023 · Applied Physics Letters

DOI: https://doi.org/10.1063/5.0150029 · OSTI ID:2418003

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University of California, Santa Barbara, CA (United States); OSTI
University of California, Santa Barbara, CA (United States)
Institut Polytechnique de Paris, Palaiseau (France)

Electron emission spectroscopy was performed on metalorganic chemical vapor deposition grown p-n^–-n⁺ junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] = 3.5 × 10¹⁹ cm^–3. By measuring the decreasing emitted electron intensity from a cesiated p-GaN surface with increasing p-thickness, we were able to extract the minority carrier diffusion length of electron in p-type GaN, L_e = 26 ± 3 nm. The measured value is in good agreement with literature reported values. In conclusion, the extrapolated electron current at the n^– region–p-GaN interface is in reasonable agreement with the simulated electron current at the interface.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States); University of California, Santa Barbara, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); Sandia National Laboratory; Simons Foundation; USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0007096; EE0009691

OSTI ID:: 2418003

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 122; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES)

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