Inhibition of atomic layer deposition of TiO2 by functionalizing silicon surface with 4-fluorophenylboronic acid

Silva-Quinones, Dhamelyz; Mason, John R.; Norden, Robert; Teplyakov, Andrew V.

doi:10.1116/6.0003316

Title: Inhibition of atomic layer deposition of TiO₂ by functionalizing silicon surface with 4-fluorophenylboronic acid

Journal Article · 10 March 2024 · Journal of Vacuum Science and Technology A

DOI: https://doi.org/10.1116/6.0003316 · OSTI ID:2406215

^[1];

^[2];

^[2]

University of Delaware, Newark, DE (United States); University of Delaware
University of Delaware, Newark, DE (United States)

As the size of the components in electronic devices decreases, new approaches and chemical modification schemes are needed to produce nanometer-size features with bottom-up manufacturing. Organic monolayers can be used as effective resists to block the growth of materials on non-growth substrates in area-selective deposition methods. However, choosing the appropriate surface modification requires knowledge of the corresponding chemistry and also a detailed investigation of the behavior of the functionalized surface in realistic deposition schemes. This study aims to investigate the chemistry of boronic acids that can be used to prepare such non-growth areas on elemental semiconductors. 4-Fluorophenylboronic acid is used as a model to investigate the possibility to utilize the Si(100) surface functionalized with this compound as a non-growth substrate in a titanium dioxide (TiO₂) deposition scheme based on sequential doses of tetrakis(dimethylamido)titanium and water. Here, a combination of X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry allows for a better understanding of the process. The resulting surface is shown to be an effective non-growth area to TiO₂ deposition when compared to currently used H-terminated silicon surfaces but to exhibit much higher stability in ambient conditions.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: University of Delaware, Newark, DE (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; National Science Foundation (NSF)

Grant/Contract Number:: EE0010249

OSTI ID:: 2406215

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 3 Vol. 42; ISSN 0734-2101

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

References (28)

Spectroscopic Studies of the Modification of Crystalline Si(111) Surfaces with Covalently-Attached Alkyl Chains Using a Chlorination/Alkylation Method Bansal, Ashish; Li, Xiuling; Yi, Sang I. The Journal of Physical Chemistry B, Vol. 105, Issue 42 https://doi.org/10.1021/jp010284p	journal	October 2001
(Invited) Area-Selective Atomic Layer Deposition: Role of Surface Chemistry Mameli, Alfredo; Karasulu, Bora; Verheijen, Marcel A. ECS Transactions, Vol. 80, Issue 3 https://doi.org/10.1149/08003.0039ecst	journal	August 2017
Attachment Chemistry of 4-Fluorophenylboronic Acid on TiO₂ and Al₂O₃ Nanoparticles Byron, Carly; Silva-Quinones, Dhamelyz; Sarkar, Sucharita Chemistry of Materials, Vol. 34, Issue 23 https://doi.org/10.1021/acs.chemmater.2c02789	journal	December 2022
Solution Chemistry to Control Boron-Containing Monolayers on Silicon: Reactions of Boric Acid and 4-Fluorophenylboronic Acid with H- and Cl-terminated Si(100) Silva-Quinones, Dhamelyz; Butera, Robert E.; Wang, George T. Langmuir, Vol. 37, Issue 23 https://doi.org/10.1021/acs.langmuir.1c00763	journal	June 2021
Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si(001)-(2×1) surface Longo, Roberto C.; McDonnell, Stephen; Dick, D. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 3 https://doi.org/10.1116/1.4864619	journal	May 2014
Low Temperature Area Selective Atomic Layer Deposition of Ruthenium Dioxide Thin Films Using Polymers as Inhibition Layers Poonkottil, Nithin; Rijckaert, Hannes; Rajendran, Khannan Advanced Materials Interfaces, Vol. 10, Issue 9 https://doi.org/10.1002/admi.202201934	journal	February 2023
The stability of Cl-, Br-, and I-passivated Si(100)-(2 × 1) in ambient environments for atomically-precise pattern preservation Frederick, E.; Dwyer, K. J.; Wang, G. T. Journal of Physics: Condensed Matter, Vol. 33, Issue 44 https://doi.org/10.1088/1361-648X/ac1aa4	journal	August 2021
In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor Clerix, Jan-Willem J.; Dianat, Golnaz; Delabie, Annelies Journal of Vacuum Science & Technology A, Vol. 41, Issue 3 https://doi.org/10.1116/6.0002493	journal	March 2023
Area-Selective Deposition: Fundamentals, Applications, and Future Outlook Parsons, Gregory N.; Clark, Robert D. Chemistry of Materials, Vol. 32, Issue 12 https://doi.org/10.1021/acs.chemmater.0c00722	journal	May 2020
Substrate-Dependent Study of Chain Orientation and Order in Alkylphosphonic Acid Self-Assembled Monolayers for ALD Blocking Bobb-Semple, Dara; Zeng, Li; Cordova, Isvar Langmuir, Vol. 36, Issue 43 https://doi.org/10.1021/acs.langmuir.0c01974	journal	October 2020
Selection Criteria for Small-Molecule Inhibitors in Area-Selective Atomic Layer Deposition: Fundamental Surface Chemistry Considerations Mameli, Alfredo; Teplyakov, Andrew V. Accounts of Chemical Research, Vol. 56, Issue 15 https://doi.org/10.1021/acs.accounts.3c00221	journal	July 2023
The Evolution of Silicon Wafer Cleaning Technology Kern, Werner Journal of The Electrochemical Society, Vol. 137, Issue 6 https://doi.org/10.1149/1.2086825	journal	January 1990
Comparative Study of Titanium Dioxide Atomic Layer Deposition on Silicon Dioxide and Hydrogen-Terminated Silicon Methaapanon, Rungthiwa; Bent, Stacey F. The Journal of Physical Chemistry C, Vol. 114, Issue 23 https://doi.org/10.1021/jp1013303	journal	May 2010
–NH– Termination of the Si(111) Surface by Wet Chemistry Tian, Fangyuan; Taber, Douglass F.; Teplyakov, Andrew V. Journal of the American Chemical Society, Vol. 133, Issue 51 https://doi.org/10.1021/ja205140h	journal	December 2011
Nitroxidation of H-Terminated Si(111) Surfaces with Nitrobenzene and Nitrosobenzene Tian, Fangyuan; Cui, Yuexing; Teplyakov, Andrew V. The Journal of Physical Chemistry C, Vol. 118, Issue 1 https://doi.org/10.1021/jp4102702	journal	December 2013
Next generation nanopatterning using small molecule inhibitors for area-selective atomic layer deposition Yarbrough, Josiah; Shearer, Alex B.; Bent, Stacey F. Journal of Vacuum Science & Technology A, Vol. 39, Issue 2 https://doi.org/10.1116/6.0000840	journal	March 2021
Building Organic Monolayers Based on Fluorinated Amines on the Si(111) Surface Cui, Yuexing; Tian, Fangyuan; Gao, Fei The Journal of Physical Chemistry C, Vol. 118, Issue 46 https://doi.org/10.1021/jp507158x	journal	November 2014
Formation of silica-supported platinum nanoparticles as a function of preparation conditions and boron impregnation Rani, Sana; Byron, Carly; Teplyakov, Andrew V. The Journal of Chemical Physics, Vol. 152, Issue 13 https://doi.org/10.1063/1.5142503	journal	April 2020
Characterizing Self-Assembled Monolayer Breakdown in Area-Selective Atomic Layer Deposition Liu, Tzu-Ling; Zeng, Li; Nardi, Katie L. Langmuir, Vol. 37, Issue 39 https://doi.org/10.1021/acs.langmuir.1c02211	journal	September 2021
Area-Selective ALD with Soft Lithographic Methods: Using Self-Assembled Monolayers to Direct Film Deposition Jiang, Xirong; Bent, Stacey F. The Journal of Physical Chemistry C, Vol. 113, Issue 41 https://doi.org/10.1021/jp905317n	journal	September 2009
Atomic Layer Deposition Beyond Thin Film Deposition Technology Yasmeen, Sumaira; Ryu, Seung Wook; Lee, Sung‐Hoon Advanced Materials Technologies, Vol. 8, Issue 20 https://doi.org/10.1002/admt.202200876	journal	October 2022
Enhancing Performance and Function of Polymethacrylate Extreme Ultraviolet Resists Using Area-Selective Deposition Nye, Rachel A.; Van Dongen, Kaat; De Simone, Danilo Chemistry of Materials, Vol. 35, Issue 5 https://doi.org/10.1021/acs.chemmater.2c03404	journal	February 2023
Advances in Atomic Layer Deposition Zhang, Jingming; Li, Yicheng; Cao, Kun Nanomanufacturing and Metrology, Vol. 5, Issue 3 https://doi.org/10.1007/s41871-022-00136-8	journal	April 2022
Probing the Interfacial Chemistry of Ultrathin ALD-Grown TiO ₂ Films: An In-Line XPS Study Bronneberg, Aafke C.; Höhn, Christian; van de Krol, Roel The Journal of Physical Chemistry C, Vol. 121, Issue 10 https://doi.org/10.1021/acs.jpcc.6b09468	journal	March 2017
From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity Mackus, Adriaan J. M.; Merkx, Marc J. M.; Kessels, Wilhelmus M. M. Chemistry of Materials, Vol. 31, Issue 1 https://doi.org/10.1021/acs.chemmater.8b03454	journal	November 2018
Dehydrative Cyclocondensation Reactions on Hydrogen-Terminated Si(100) and Si(111): An ex Situ Tool for the Modification of Semiconductor Surfaces Leftwich, Timothy R.; Madachik, Mark R.; Teplyakov, Andrew V. Journal of the American Chemical Society, Vol. 130, Issue 48 https://doi.org/10.1021/ja802645t	journal	December 2008
The Effect of Surface Terminations on the Initial Stages of TiO₂ Deposition on Functionalized Silicon Parke, Tyler; Silva‐Quinones, Dhamelyz; Wang, George T. ChemPhysChem, Vol. 24, Issue 7 https://doi.org/10.1002/cphc.202200724	journal	January 2023
Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition Nye, Rachel A.; Song, Seung Keun; Van Dongen, Kaat Applied Physics Letters, Vol. 121, Issue 8 https://doi.org/10.1063/5.0106132	journal	August 2022

Similar Records

Understanding the mechanisms of interfacial reactions during TiO{sub 2} layer growth on RuO{sub 2} by atomic layer deposition with O{sub 2} plasma or H{sub 2}O as oxygen source

Journal Article · 2016 · Journal of Applied Physics · OSTI ID:22598848

Chaker, A.; Szkutnik, P. D.; Pointet, J.; +2 more

Diffusion and interface evolution during the atomic layer deposition of TiO{sub 2} on GaAs(100) and InAs(100) surfaces

Journal Article · 2016 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films · OSTI ID:22489739

Ye, Liwang; Gougousi, Theodosia

Synthesis of TiO{sub 2} thin films using single molecular precursors by MOCVD method for dye-sensitized solar cells application and study on film growth mechanism

Journal Article · 2012 · Materials Research Bulletin · OSTI ID:22215486

Nam, Sang Hun; Hyun, Jae-Sung; Boo, Jin-Hyo

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Electronic devices
Profilometry
Atomic force microscopy
Atomic layer deposition
Secondary ion mass spectrometry
Depth profiling techniques
X-ray photoelectron spectroscopy
Semiconductors

Title: Inhibition of atomic layer deposition of TiO2 by functionalizing silicon surface with 4-fluorophenylboronic acid

Citation Formats

References (28)

Similar Records

Related Subjects

Title: Inhibition of atomic layer deposition of TiO₂ by functionalizing silicon surface with 4-fluorophenylboronic acid