Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi2Te4

Chong, Su Kong; Cheng, Yang; Man, Huiyuan; Lee, Seng Huat; Wang, Yu; Dai, Bingqian; Tanabe, Masaki; Yang, Ting-Hsun; Mao, Zhiqiang; Moler, Kathryn A.; Wang, Kang L.

doi:10.1038/s41467-024-46689-8

Title: Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi₂Te₄

Journal Article · 03 April 2024 · Nature Communications

DOI: https://doi.org/10.1038/s41467-024-46689-8 · OSTI ID:2405190

^[1]; Cheng, Yang ^[2]; Man, Huiyuan ^[3];

^[4]; Wang, Yu ^[4];

^[2]; Tanabe, Masaki ^[2]; Yang, Ting-Hsun ^[2];

^[4]; Moler, Kathryn A. ^[5];

^[2]

Univ. of California, Los Angeles, CA (United States); SLAC
Univ. of California, Los Angeles, CA (United States)
Stanford Univ., CA (United States)
Pennsylvania State Univ., University Park, PA (United States)
Stanford Univ., CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet structures in conventional exchange bias systems can be challenging due to difficulties in interface control and the weakening of spin-pinning caused by poor interface quality. In this work, we propose an alternative approach to stabilize the exchange interaction at the interface of an uncompensated antiferromagnet by utilizing a gradient of interlayer exchange coupling. We demonstrate this exchange interaction through a designed field training protocol in the odd-layer topological antiferromagnet MnBi₂Te₄. Our results reveal a remarkable field-trained exchange bias of up to ~ 400 mT, which exhibits high repeatability and can be easily reset by a large training field. Notably, this field-trained exchange bias effect persists even with zero-field initialization, presenting a stark contrast to the traditional field-cooled exchange bias. The highly tunable exchange bias observed in this single antiferromagnet compound, without the need for an additional magnetic layer, provides valuable insight into the exchange interaction mechanism. These findings pave the way for the systematic design of topological antiferromagnetic spintronics.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); US Army Research Office (ARO); National Science Foundation (NSF); Beijing Natural Science Foundation

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 2405190

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 15; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

References (45)

Strain‐Sensitive Magnetization Reversal of a van der Waals Magnet Wang, Yu; Wang, Cong; Liang, Shi‐Jun Advanced Materials, Vol. 32, Issue 42 https://doi.org/10.1002/adma.202004533	journal	September 2020
Manipulating Exchange Bias in a Van der Waals Ferromagnet Wu, Yingying; Wang, Wei; Pan, Lei Advanced Materials, Vol. 34, Issue 12 https://doi.org/10.1002/adma.202105266	journal	February 2022
Controlling Exchange Interactions and Emergent Magnetic Phenomena in Layered 3d‐Orbital Ferromagnets Bi, Xiangyu; Qiu, Caiyu; Qin, Feng Advanced Physics Research, Vol. 2, Issue 6 https://doi.org/10.1002/apxr.202200106	journal	January 2023
Exchange bias Nogués, J.; Schuller, Ivan K. Journal of Magnetism and Magnetic Materials, Vol. 192, Issue 2 https://doi.org/10.1016/S0304-8853(98)00266-2	journal	February 1999
Role of the antiferromagnetic bulk spins in exchange bias Schuller, Ivan K.; Morales, Rafael; Batlle, Xavier Journal of Magnetism and Magnetic Materials, Vol. 416 https://doi.org/10.1016/j.jmmm.2016.04.065	journal	October 2016
Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi ₂ Te ₄ Ovchinnikov, Dmitry; Huang, Xiong; Lin, Zhong Nano Letters, Vol. 21, Issue 6 https://doi.org/10.1021/acs.nanolett.0c05117	journal	March 2021
Even–Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi ₂ Te ₄ Thin Films Zhao, Yi-Fan; Zhou, Ling-Jie; Wang, Fei Nano Letters, Vol. 21, Issue 18 https://doi.org/10.1021/acs.nanolett.1c02493	journal	September 2021
Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI₃/MnBi₂Te₄ van der Waals Heterostructures Ying, Zhe; Chen, Bo; Li, Chunfeng Nano Letters, Vol. 23, Issue 3 https://doi.org/10.1021/acs.nanolett.2c02882	journal	December 2022
Near Room-Temperature Intrinsic Exchange Bias in an Fe Intercalated ZrSe₂ Spin Glass Kong, Zhizhi; Kaminsky, Corey J.; Groschner, Catherine K. Journal of the American Chemical Society, Vol. 145, Issue 36 https://doi.org/10.1021/jacs.3c06967	journal	August 2023
Transition from Ferromagnetic Semiconductor to Ferromagnetic Metal with Enhanced Curie Temperature in Cr ₂ Ge ₂ Te ₆ via Organic Ion Intercalation Wang, Naizhou; Tang, Huaibao; Shi, Mengzhu Journal of the American Chemical Society, Vol. 141, Issue 43 https://doi.org/10.1021/jacs.9b06929	journal	October 2019
Exchange bias using a spin glass Ali, Mannan; Adie, Patrick; Marrows, Christopher H. Nature Materials, Vol. 6, Issue 1 https://doi.org/10.1038/nmat1809	journal	December 2006
Robust isothermal electric control of exchange bias at room temperature He, Xi; Wang, Yi; Wu, Ning Nature Materials, Vol. 9, Issue 7 https://doi.org/10.1038/nmat2785	journal	June 2010
A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction Park, B. G.; Wunderlich, J.; Martí, X. Nature Materials, Vol. 10, Issue 5 https://doi.org/10.1038/nmat2983	journal	March 2011
Room-temperature antiferromagnetic memory resistor Marti, X.; Fina, I.; Frontera, C. Nature Materials, Vol. 13, Issue 4 https://doi.org/10.1038/nmat3861	journal	January 2014
Design of compensated ferrimagnetic Heusler alloys for giant tunable exchange bias Nayak, Ajaya K.; Nicklas, Michael; Chadov, Stanislav Nature Materials, Vol. 14, Issue 7 https://doi.org/10.1038/nmat4248	journal	March 2015
Spontaneous exchange bias formation driven by a structural phase transition in the antiferromagnetic material Migliorini, A.; Kuerbanjiang, B.; Huminiuc, T. Nature Materials, Vol. 17, Issue 1 https://doi.org/10.1038/nmat5030	journal	November 2017
Antiferromagnetic spintronics Jungwirth, T.; Marti, X.; Wadley, P. Nature Nanotechnology, Vol. 11, Issue 3 https://doi.org/10.1038/nnano.2016.18	journal	March 2016
A van der Waals antiferromagnetic topological insulator with weak interlayer magnetic coupling Hu, Chaowei; Gordon, Kyle N.; Liu, Pengfei Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-019-13814-x	journal	January 2020
Exchange biased anomalous Hall effect driven by frustration in a magnetic kagome lattice Lachman, Ella; Murphy, Ryan A.; Maksimovic, Nikola Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-020-14326-9	journal	January 2020
Magnons and magnetic fluctuations in atomically thin MnBi2Te4 Lujan, David; Choe, Jeongheon; Rodriguez-Vega, Martin Nature Communications, Vol. 13, Issue 1 https://doi.org/10.1038/s41467-022-29996-w	journal	May 2022
Ferromagnetic-antiferromagnetic coexisting ground state and exchange bias effects in MnBi4Te7 and MnBi6Te10 Xu, Xiaolong; Yang, Shiqi; Wang, Huan Nature Communications, Vol. 13, Issue 1 https://doi.org/10.1038/s41467-022-35184-7	journal	December 2022
Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications Huang, Xinyu; Zhang, Luman; Tong, Lei Nature Communications, Vol. 14, Issue 1 https://doi.org/10.1038/s41467-023-37918-7	journal	April 2023
Anomalous Landau quantization in intrinsic magnetic topological insulators Chong, Su Kong; Lei, Chao; Lee, Seng Huat Nature Communications, Vol. 14, Issue 1 https://doi.org/10.1038/s41467-023-40383-x	journal	August 2023
Native point defects and their implications for the Dirac point gap at MnBi2Te4(0001) Garnica, M.; Otrokov, M. M.; Aguilar, P. Casado npj Quantum Materials, Vol. 7, Issue 1 https://doi.org/10.1038/s41535-021-00414-6	journal	January 2022
Manipulating exchange bias by spin–orbit torque Lin, Po-Hung; Yang, Bo-Yuan; Tsai, Ming-Han Nature Materials, Vol. 18, Issue 4 https://doi.org/10.1038/s41563-019-0289-4	journal	February 2019
Coherent antiferromagnetic spintronics Han, Jiahao; Cheng, Ran; Liu, Luqiao Nature Materials, Vol. 22, Issue 6 https://doi.org/10.1038/s41563-023-01492-6	journal	March 2023
The multiple directions of antiferromagnetic spintronics Jungwirth, T.; Sinova, J.; Manchon, A. Nature Physics, Vol. 14, Issue 3 https://doi.org/10.1038/s41567-018-0063-6	journal	March 2018
Exchange bias due to coupling between coexisting antiferromagnetic and spin-glass orders Maniv, Eran; Murphy, Ryan A.; Haley, Shannon C. Nature Physics, Vol. 17, Issue 4 https://doi.org/10.1038/s41567-020-01123-w	journal	January 2021
Evidence of non-collinear spin texture in magnetic moiré superlattices Xie, Hongchao; Luo, Xiangpeng; Ye, Zhipeng Nature Physics, Vol. 19, Issue 8 https://doi.org/10.1038/s41567-023-02061-z	journal	May 2023
Prediction and observation of an antiferromagnetic topological insulator Otrokov, M. M.; Klimovskikh, I. I.; Bentmann, H. Nature, Vol. 576, Issue 7787 https://doi.org/10.1038/s41586-019-1840-9	journal	December 2019
Pushing carbon nanotube circuits below the 10-nm node Chen, Rongmei Nature Electronics, Vol. 6, Issue 7 https://doi.org/10.1038/s41928-023-00986-0	journal	July 2023
Oxidation of tunnel barrier metals in magnetic tunnel junctions Yang, J. Joshua; Ladwig, Peter F.; Yang, Ying Journal of Applied Physics, Vol. 97, Issue 10 https://doi.org/10.1063/1.1854011	journal	May 2005
Colossal intrinsic exchange bias from interfacial reconstruction in epitaxial CoFe2O4/Al2O3 thin films Yang, Detian; Yun, Yu; Subedi, Arjun Physical Review B, Vol. 103, Issue 22 https://doi.org/10.1103/PhysRevB.103.224405	journal	June 2021
Local manifestations of thickness-dependent topology and edge states in the topological magnet MnBi 2 Te 4 Lüpke, Felix; Pham, Anh D.; Zhao, Yi-Fan Physical Review B, Vol. 105, Issue 3 https://doi.org/10.1103/PhysRevB.105.035423	journal	January 2022
Tunable exchange bias in the magnetic Weyl semimetal Co3Sn2S2 Noah, Avia; Toric, Filip; Feld, Tomer D. Physical Review B, Vol. 105, Issue 14 https://doi.org/10.1103/PhysRevB.105.144423	journal	April 2022
Exchange bias in the van der Waals heterostructure MnBi2Te4/Cr2Ge2Te6 Fang, Jing-Zhi; Cui, Hao-Nan; Wang, Shuo Physical Review B, Vol. 107, Issue 4 https://doi.org/10.1103/PhysRevB.107.L041107	journal	January 2023
Large Exchange Bias after Zero-Field Cooling from an Unmagnetized State Wang, B. M.; Liu, Y.; Ren, P. Physical Review Letters, Vol. 106, Issue 7 https://doi.org/10.1103/PhysRevLett.106.077203	journal	February 2011
Unique Thickness-Dependent Properties of the van der Waals Interlayer Antiferromagnet MnBi 2 Te 4 Films Otrokov, M. M.; Rusinov, I. P.; Blanco-Rey, M. Physical Review Letters, Vol. 122, Issue 10 https://doi.org/10.1103/PhysRevLett.122.107202	journal	March 2019
Coercivity Enhancement in Exchange Biased Systems Driven by Interfacial Magnetic Frustration Leighton, C.; Nogués, J.; Jönsson-Åkerman, B. J. Physical Review Letters, Vol. 84, Issue 15 https://doi.org/10.1103/PhysRevLett.84.3466	journal	April 2000
Antiferromagnetic spintronics Baltz, V.; Manchon, A.; Tsoi, M. Reviews of Modern Physics, Vol. 90, Issue 1 https://doi.org/10.1103/RevModPhys.90.015005	journal	February 2018
Exchange-biased spin-valves for magnetic storage Kools, J. C. S. IEEE Transactions on Magnetics, Vol. 32, Issue 4 https://doi.org/10.1109/20.508381	journal	July 1996
Intrinsic magnetic topological insulators in van der Waals layered MnBi ₂ Te ₄ -family materials Li, Jiaheng; Li, Yang; Du, Shiqiao Science Advances, Vol. 5, Issue 6 https://doi.org/10.1126/sciadv.aaw5685	journal	June 2019
Probing magnetism in 2D materials at the nanoscale with single-spin microscopy Thiel, L.; Wang, Z.; Tschudin, M. A. Science, Vol. 364, Issue 6444 https://doi.org/10.1126/science.aav6926	journal	April 2019
Supplementary Material for ???Native point defects and their implications for the Dirac point gap at MnBi2Te4(0001)??? Garnica, Manuela; Otrokov, M. M.; Casado Aguilar, P. Springer Nature https://doi.org/10.20350/digitalcsic/15306	dataset	January 2022
OOMMF User's Guide, Version 1.0 Donahue, M. J.; Porter, D. G. National Institute of Standards and Technology (NIST) https://doi.org/10.6028/NIST.IR.6376	report	September 1999

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