Growth and characterization of α-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

Engel, Aaron N.; Dempsey, Connor P.; Inbar, Hadass S.; Dong, Jason T.; Nishihaya, Shinichi; Chang, Yuhao; Fedorov, Alexei V.; Hashimoto, Makoto; Lu, Donghui; Palmstrøm, Christopher J.

doi:10.1103/physrevmaterials.8.044202

Title: Growth and characterization of α-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

Journal Article · 15 April 2024 · Physical Review Materials

DOI: https://doi.org/10.1103/physrevmaterials.8.044202 · OSTI ID:2405007

^[1]; Dempsey, Connor P. ^[2]; Inbar, Hadass S. ^[2];

^[2]; Nishihaya, Shinichi ^[3]; Chang, Yuhao ^[2];

^[4]; Hashimoto, Makoto ^[5]; Lu, Donghui ^[5];

^[2]

University of California, Santa Barbara, CA (United States); SLAC
University of California, Santa Barbara, CA (United States)
University of California, Santa Barbara, CA (United States); Tokyo Institute of Technology (Japan)
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

α-Sn thin films can exhibit a variety of topologically nontrivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of α-Sn thin films. α-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing α-Sn via molecular beam epitaxy on the Sb-rich c(4×4) surface reconstruction of InSb(001) rather than the In-rich c(8×2), we demonstrate a route to substantially decrease and minimize this indium incorporation. The reduction in indium concentration allows for the study of the surface and bulk Dirac nodes in α-Sn via angle-resolved photoelectron spectroscopy without the common approaches of bulk doping or surface dosing, simplifying topological phase identification. In this study, the lack of indium incorporation is verified in angle-resolved and angle-integrated ultraviolet photoelectron spectroscopy as well as in clear changes in the Hall response.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); US Army Research Laboratory (USARL); UC Santa Barbara NSF Quantum Foundry

Grant/Contract Number:: AC02-76SF00515; SC0014388; AC02-05CH11231

OSTI ID:: 2405007

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 4 Vol. 8; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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