Hole‐Carrier‐Dominant Transport in 2D Single‐Crystal Copper
- Department of Physics Pusan National University Busan 46241 Republic of Korea
- Department of Energy Science Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea
- Department of Physics Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea
- Department of Physics and Institute of Quantum Convergence Technology Kangwon National University Gangwon 24341 Republic of Korea, Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
- Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
- Crystal Bank Research Institute Pusan National University Busan 46241 Republic of Korea
- Department of Physics and Astronomy Mississippi State University Mississippi State MS 39762 USA
- Advanced Light Source Lawrence Berkeley National Laboratory Berkeley CA 94720 USA, Center for Spintronics Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea
- Center for Spintronics Korea Institute of Science and Technology (KIST) Seoul 02792 Republic of Korea
- Copper Innovative Technology (CIT) Co. Busan 46285 Republic of Korea
- Department of Physics Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea, Gordon Center for Medical Imaging Department of Radiology Massachusetts General Hospital and Harvard Medical School Boston MA 02114 USA, Department of Optics and Mechatronics Engineering Engineering Research Center for Color‐Modulated Extra‐Sensory Perception Technology Pusan National University Busan 46241 Republic of Korea
Abstract In 2D noble metals like copper, the carrier scattering at grain boundaries has obscured the intrinsic nature of electronic transport. However, it is demonstrated that the intrinsic nature of transport by hole carriers in 2D copper can be revealed by growing thin films without grain boundaries. As even a slight deviation from the twin boundary is perceived as grain boundaries by electrons, it is only through the thorough elimination of grain boundaries that the hidden hole‐like attribute of 2D single‐crystal copper can be unmasked. Two types of Fermi surfaces, a large hexagonal Fermi surface centered at the zone center and the triangular Fermi surface around the zone corner, tightly matching to the calculated Fermi surface topology, confirmed by angle‐resolved photoemission spectroscopy (ARPES) measurements and vivid nonlinear Hall effects of the 2D single‐crystal copper account for the presence of hole carriers experimentally. This breakthrough suggests the potential to manipulate the majority carrier polarity in metals by means of grain boundary engineering in a 2D geometry.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Korea Research Institute of Standards and Science; Korean Ministry of Education; National Research Foundation of Korea (NRF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 2404464
- Journal Information:
- Advanced Materials, Journal Name: Advanced Materials; ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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