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Title: Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe4

Journal Article · · Nature Communications
ORCiD logo [1]; ORCiD logo [2];  [3]; ORCiD logo [4];  [5];  [6];  [7]; ORCiD logo [7]; ORCiD logo [7]; ORCiD logo [6]; ORCiD logo [8]; ORCiD logo [9]; ORCiD logo [10]; ORCiD logo [11]; ORCiD logo [7]; ORCiD logo [7]
  1. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Korea Institute of Science and Technology (KIST), Seoul (Korea, Republic of). Center for Spintronics; Pusan National Univ., Busan (Korea, Republic of); Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Max Planck POSTECH Center for Complex Phase Materials
  2. Brookhaven National Laboratory (BNL), Upton, NY (United States); Chongqing Univ. (China)
  3. Brookhaven National Laboratory (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)
  4. Korea Institute of Science and Technology (KIST), Seoul (Korea, Republic of). Center for Spintronics; Kyung Hee Univ., Seoul (Korea, Republic of)
  5. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Kangwon National Univ., Chuncheon (Korea, Republic of)
  6. Kyung Hee Univ., Seoul (Korea, Republic of)
  7. Korea Institute of Science and Technology (KIST), Seoul (Korea, Republic of). Center for Spintronics
  8. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  9. Brookhaven National Laboratory (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States); Shanghai Advanced Research in Physical Sciences (China)
  10. Pusan National Univ., Busan (Korea, Republic of)
  11. Soongsil University, Seoul (Korea, Republic of)

The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
AC02-05CH11231; SC0012704
OSTI ID:
2404338
Journal Information:
Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 15; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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