Quantum control of exciton wave functions in 2D semiconductors

Hu, Jenny; Lorchat, Etienne; Chen, Xueqi; Watanabe, Kenji; Taniguchi, Takashi; Heinz, Tony F.; Murthy, Puneet A.; Chervy, Thibault

doi:10.1126/sciadv.adk6369

Title: Quantum control of exciton wave functions in 2D semiconductors

Journal Article · 20 March 2024 · Science Advances

DOI: https://doi.org/10.1126/sciadv.adk6369 · OSTI ID:2396811

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Stanford Univ., CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); SLAC
NTT Research, Inc., Sunnyvale, CA (United States)
Stanford Univ., CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
National Institute for Materials Science (NIMS), Tsukuba (Japan)
Eidgenoessische Technische Hochschule (ETH), Zurich (Switzerland)

Excitons—bound electron-hole pairs—play a central role in light-matter interaction phenomena and are crucial for wide-ranging applications from light harvesting and generation to quantum information processing. A long-standing challenge in solid-state optics has been to achieve precise and scalable control over excitonic motion. We present a technique using nanostructured gate electrodes to create tailored potential landscapes for excitons in 2D semiconductors, enabling in situ wave function shaping at the nanoscale. Our approach forms electrostatic traps for excitons in various geometries, such as quantum dots, rings, and arrays thereof. We show independent spectral tuning of spatially separated quantum dots, achieving degeneracy despite material disorder. Owing to the strong light-matter coupling of excitons in 2D semiconductors, we observe unambiguous signatures of confined exciton wave functions in optical reflection and photoluminescence measurements. This work unlocks possibilities for engineering exciton dynamics and interactions at the nanometer scale, with implications for optoelectronic devices, topological photonics, and quantum nonlinear optics.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE) National Science Foundation (NSF); Gordon and Betty Moore Foundation (GBMF); Japan Society for the Promotion of Science (JSPS); Swiss National Science Foundation (SNSF)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 2396811

Journal Information:: Science Advances, Journal Name: Science Advances Journal Issue: 12 Vol. 10; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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