Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method

Zhou, Jingan; Li, Tao; Zhao, Xuan; Zhang, Xiang; Doumani, Jacques; Xu, Mingfei; He, Ziyi; Luo, Shisong; Mei, Zhaobo; Chang, Cheng; Robinson, Jacob T.; Ajayan, Pulickel M.; Kono, Junichiro; Zhao, Yuji

doi:10.1088/1361-6641/ad4f09

Title: Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method

Journal Article · 03 June 2024 · Semiconductor Science and Technology

DOI: https://doi.org/10.1088/1361-6641/ad4f09 · OSTI ID:2369699

Zhou, Jingan;

; Zhao, Xuan;

; Doumani, Jacques; Xu, Mingfei; He, Ziyi; Luo, Shisong; Mei, Zhaobo; Chang, Cheng; Robinson, Jacob T.; Ajayan, Pulickel M.; Kono, Junichiro; Zhao, Yuji

Abstract In this work, we reported two-photon absorption (TPA) measurements for aluminum vacancies in Aluminum nitride single crystals. We measured the linear transmission and identified the defect levels. Using the Z-scan method, we measured the TPA coefficients of the transitions between defect levels from 380 nm to 735 nm. The transition occurs between the aluminum vacancies defect levels. Furthermore, the power dependence shows good linear fitting, confirming the TPA mechanism. These results will be helpful for the design and fabrication of ultra-low loss waveguides and integrated photonics in the ultraviolet spectral range.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0021230

OSTI ID:: 2369699

Alternate ID(s):: OSTI ID: 2352765

Journal Information:: Semiconductor Science and Technology, Journal Name: Semiconductor Science and Technology Vol. 39 Journal Issue: 7; ISSN 0268-1242

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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