Programmable quantum emitter formation in silicon

Jhuria, K.; Ivanov, V.; Polley, D.; Zhiyenbayev, Y.; Liu, W.; Persaud, A.; Redjem, W.; Qarony, W.; Parajuli, P.; Ji, Q.; Gonsalves, A. J.; Bokor, J.; Tan, L. Z.; Kanté, B.; Schenkel, T.

doi:10.1038/s41467-024-48714-2

Title: Programmable quantum emitter formation in silicon

Journal Article · 26 May 2024 · Nature Communications

DOI: https://doi.org/10.1038/s41467-024-48714-2 · OSTI ID:2367245

; Ivanov, V.; Polley, D.; Zhiyenbayev, Y.;

;

; Redjem, W.; Qarony, W.; Parajuli, P.; Ji, Q.; Gonsalves, A. J.;

;

Abstract Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N ₂ /H ₂ ) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and C _i centers while passivating the more common G-centers. The C _i center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the C _i center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 2367245

Alternate ID(s):: OSTI ID: 2404341

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 15; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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