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Title: Enhanced passivation and stability of negative charge injected SiNx with higher nitrogen content on the boron diffused surface of n-type Si solar cells

Journal Article · · Solar Energy Materials and Solar Cells

This paper explores the potential of the negatively charged SiNx using plasma charge injection technology to passivate the front textured boron-diffused emitter of n-type Si solar cells. The high-x value single SiNx layer with x ≥ 1.30 (x = N/Si) previously developed for the planarized rear-side passivation of p-type silicon solar cells, with an excellent passivation and charge stability, was found to be unacceptable for the passivation on the front textured boron emitter of n-type cells due to a severe bulk lifetime degradation issue. Therefore, in this study, we investigated a new concept of depositing a dual-x SiNx with a low-x SiNx layer (x~1.01) on top of a high-x SiNx layer (x~1.30) for passivation of the front textured rough surface of boron diffused emitter in n-type cells. Here, the optimized dual-x SiNx stack reveals the promise of charge retention for more than 25 years in field operation as well as excellent passivation of boron-doped emitter without bulk lifetime degradation. N-type cells with the optimized dual-x SiNx after charge injection show comparable cell performance to Al2O3 passivated reference cells. The results of cell-level light stability tests using one-cell minimodules exhibit cell performance decay characteristics similar to the traditional Al2O3/SiNx passivated reference module.

Research Organization:
Inert Plasma Charging LLC, Chandler, AZ (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; National Science Foundation (NSF)
Grant/Contract Number:
EE0008566
OSTI ID:
2352120
Journal Information:
Solar Energy Materials and Solar Cells, Journal Name: Solar Energy Materials and Solar Cells Vol. 273; ISSN 0927-0248
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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