Formation mechanism of two-dimensional hexagonal silica on SiO2/Si substrate

Maisha, Nuzhat; Ogunbiyi, Olugbenga; Gao, Guanhui; Sun, Mingyuan; Puretzky, Alexander; Li, Bo; Yang, Yingchao

doi:10.1016/j.jcrysgro.2024.127685

Title: Formation mechanism of two-dimensional hexagonal silica on SiO₂/Si substrate

Journal Article · 26 March 2024 · Journal of Crystal Growth

DOI: https://doi.org/10.1016/j.jcrysgro.2024.127685 · OSTI ID:2351035

Maisha, Nuzhat ^[1]; Ogunbiyi, Olugbenga ^[2]; Gao, Guanhui ^[3]; Sun, Mingyuan ^[4]; Puretzky, Alexander ^[5]; Li, Bo ^[4]; Yang, Yingchao ^[6]

Univ. of Maine, Orono, ME (United States)
Univ. of Missouri, Columbia, MO (United States)
Rice Univ., Houston, TX (United States)
Villanova Univ., PA (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Univ. of Maine, Orono, ME (United States); Univ. of Missouri, Columbia, MO (United States)

In this study, owing to their remarkable electronic properties, silica ultrathin films have been utilized as an insulating layer in nanoelectronics systems. Silica films have been epitaxially grown on different substrates using various synthesis methods. Among all fabrication approaches, chemical vapor deposition has long been an advanced method for synthesizing two-dimensional (2D) materials due to its ability to ensure precise stacking control and minimize contamination between layers. This study harnessed the potential of CVD to atomically fabricate thin layered 2D silica on a SiO₂/Si substrate. Significantly, a unique combination of multiple transition metals and salt as the catalysts aided the formation of 2D silica for the first time. Salt is a crucial catalyst in promoting the evaporation of high-melting-point metal catalysts, resulting in hexagonal nucleation sites on the SiO₂/Si wafer. By meticulously controlling growth parameters, a distinctive hexagonal structure was obtained. Correspondingly, this work delves into the growth mechanism of 2D silica, as evidenced by experiments involving salt alone and individual transition metals. Group VB transition metals played a prominent role in achieving the hexagonal structure compared to their group IVB counterparts. This research offers insight into the formation and growth mechanism of 2D silica, expanding the understanding of silica nanostructures.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: AC05-00OR22725; SC0021127

OSTI ID:: 2351035

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: 1 Vol. 634; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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