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Title: Uniaxial stress effect on the electronic structure of quantum materials

Journal Article · · Frontiers in Electronic Materials
 [1];  [2];  [3]
  1. Univ. of Michigan, Ann Arbor, MI (United States)
  2. Max Planck Institute for Chemical Physics of Solids, Dresden (Germany)
  3. Pennsylvania State Univ., University Park, PA (United States)

Uniaxial stress has proven to be a powerful experimental tuning parameter for effectively controlling lattice, charge, orbital, and spin degrees of freedom in quantum materials. In addition, its ability to manipulate the symmetry of materials has garnered significant attention. Recent technical progress to combine uniaxial stress cells with quantum oscillation and angle-resolved photoemission techniques allowed to study the electronic structure as function of uniaxial stress. This review provides an overview on experimental advancements in methods and examines studies on diverse quantum materials, encompassing the semimetal WTe2, the unconventional superconductor Sr2RuO4, Fe-based superconductors, and topological materials.

Research Organization:
Pennsylvania State Univ., University Park, PA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
SC0024135
OSTI ID:
2349079
Journal Information:
Frontiers in Electronic Materials, Vol. 4; ISSN 2673-9895
Publisher:
Frontiers Media S.A.Copyright Statement
Country of Publication:
United States
Language:
English

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Figures / Tables (10)