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Title: Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

Journal Article · · IEEE Transactions on Electron Devices

In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially power-efficient because they encode information temporally and can use more sparse electrical inputs. Here, we study the design of volatile memristors (variable resistors with memory) for neuronal devices, with particular consideration toward the feasibility of all-on-chip oscillation using built-in capacitance. We use circuit simulations to model the behavior of oscillator neurons with a range of realistic material properties. We find that energy inputs increase with insulating-phase resistivity, thermal conductivity, and device aspect ratio. However, we also find that the minimum capacitance needed for oscillation decreases with increasing insulating-phase resistivity, which opposes the constraints for power efficiency. Based on published data on NbO2, VO2, and EuNiO3, we find that existing materials can be engineered for all-on-chip spiking using their parasitic capacitance.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Laboratory Directed Research and Development (LDRD) Program
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
2342002
Report Number(s):
NREL/JA--5K00-89731; MainId:90510; UUID:f34b33aa-39d1-4931-a761-c74b377f41e4; MainAdminId:72483
Journal Information:
IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 5 Vol. 71; ISSN 0018-9383
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

References (38)

Harnessing the Metal–Insulator Transition of VO 2 in Neuromorphic Computing journal November 2022
Terahertz Electrodynamics in Transition Metal Oxides journal September 2019
An Oxygen Vacancy Memristor Ruled by Electron Correlations journal July 2022
Preparation, Crystal Structure, and Metal-to-Insulator Transition of EuNiO3 journal November 1995
Ultrahigh tunability of resistive switching in strongly correlated functional oxide journal February 2023
Integration and Co-design of Memristive Devices and Algorithms for Artificial Intelligence journal December 2020
Building Brain-Inspired Logic Circuits from Dynamically Switchable Transition-Metal Oxides journal November 2019
The missing memristor found journal May 2008
Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing journal August 2017
A correlated nickelate synaptic transistor journal October 2013
A scalable neuristor built with Mott memristors journal December 2012
Memristive devices for computing journal January 2013
Biological plausibility and stochasticity in scalable VO2 active memristor neurons journal November 2018
A calibratable sensory neuron based on epitaxial VO2 for spike-based neuromorphic multisensory system journal July 2022
Third-order nanocircuit elements for neuromorphic engineering journal September 2020
Power-efficient combinatorial optimization using intrinsic noise in memristor Hopfield neural networks journal July 2020
Synchronized charge oscillations in correlated electron systems journal May 2014
On the lack of monoclinic distortion in the insulating regime of EuNiO3 and GdNiO3 perovskites by high-angular resolution synchrotron X-ray diffraction: a comparison with YNiO3 journal January 2021
Decoupling the metal–insulator transition temperature and hysteresis of VO2 using Ge alloying and oxygen vacancies journal January 2022
Electrochemically driven dual bipolar resistive switching in LaNiO3/SmNiO3/Nb:SrTiO3 heterostructures fabricated through selective area epitaxy journal January 2022
Correlated memory resistor in epitaxial NdNiO 3 heterostructures with asymmetrical proton concentration journal March 2016
NbO x based oscillation neuron for neuromorphic computing journal September 2017
Neuromorphic thermal-electric circuits based on phase-change VO 2 thin-film memristor elements journal January 2019
Brain-inspired computing with memristors: Challenges in devices, circuits, and systems journal March 2020
Physics-based compact modeling of electro-thermal memristors: Negative differential resistance, local activity, and non-local dynamical bifurcations journal March 2022
Epitaxial stabilization of ultra-thin films of EuNiO 3 journal September 2013
Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices journal May 2012
Metal chalcogenides for neuromorphic computing: emerging materials and mechanisms journal June 2021
2022 roadmap on neuromorphic computing and engineering journal May 2022
Dynamics of the electrically induced insulator-to-metal transition in rare-earth nickelates journal October 2021
Electronic structure and metal-insulator transition in LaNiO 3 − δ journal March 2002
Transition from Curie-Weiss to enhanced Pauli paramagnetism in R NiO 3 ( R = L a , P r , … Gd ) journal January 2003
Strain-modulated Mott transition in EuNiO 3 ultrathin films journal August 2013
Charge Disproportionation in R NiO 3 Perovskites: Simultaneous Metal-Insulator and Structural Transition in YNiO 3 journal May 1999
Neuromorphic electronic systems journal January 1990
VTEAM: A General Model for Voltage-Controlled Memristors journal August 2015
State Dynamics and Modeling of Tantalum Oxide Memristors journal July 2013
3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications journal January 2017