Investigation of Interlayer Dielectric in BaTiO3/III–Nitride Transistors

Lee, Hyunsoo; McGlone, Joe F.; Rahman, Sheikh Ifatur; Chae, Christopher; Joishi, Chandan; Hwang, Jinwoo; Rajan, Siddharth

doi:10.1002/pssr.202400042

Title: Investigation of Interlayer Dielectric in BaTiO₃/III–Nitride Transistors

Journal Article · 11 April 2024 · Physica Status Solidi. Rapid Research Letters

DOI: https://doi.org/10.1002/pssr.202400042 · OSTI ID:2341842

^[1];

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^[2]; Chae, Christopher ^[2];

^[2]; Hwang, Jinwoo ^[2];

^[2]

The Ohio State University, Columbus, OH (United States); The Ohio State University
The Ohio State University, Columbus, OH (United States)

In this paper, the impact of varying the thickness of the Al₂O₃ interlayer dielectric on the electrical characteristics of BaTiO₃/III-nitride transistors is investigated. In the findings, it is revealed that a minimum thickness of 8 nm for the Al₂O₃ layer is crucial to maintain high device performance and protect against sputtering-induced damage during BaTiO₃ deposition. The fabricated BaTiO₃/Al₂O₃/AlGaN/GaN high electron mobility transistors exhibit exceptional electrical properties, including a maximum current density of 700 mA mm^–1, an on-resistance of 5 Ω mm, an I_ON/I_OFF ratio of 10⁷, a subthreshold slope of 119 mV dec^–1, and significantly reduced gate leakage current. The devices with the optimal 8 nm Al₂O₃ thickness demonstrates excellent agreement between theoretical and experimental values for effective mobility, achieving a value of 1188 cm² V^–1·s at a 2D electron gas density of 10¹³ cm^–2. Furthermore, in the study, it is confirmed that increasing the Al₂O₃ thickness also improves the quality of interface charge density, as evidenced by the results obtained from capacitance–voltage measurements. In these findings, the critical role of controlling the Al₂O₃ thickness in optimizing the electrical characteristics and overall performance of BaTiO₃/III-nitride transistors are highlighted.

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Research Organization:: Georgia Institute of Technology,Atlanta, GA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003921

OSTI ID:: 2341842

Journal Information:: Physica Status Solidi. Rapid Research Letters, Journal Name: Physica Status Solidi. Rapid Research Letters Journal Issue: 8 Vol. 18; ISSN 1862-6254

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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GaN
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Title: Investigation of Interlayer Dielectric in BaTiO3/III–Nitride Transistors

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Title: Investigation of Interlayer Dielectric in BaTiO₃/III–Nitride Transistors