Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation

Rasel, Md Abu Jafar; Schoell, Ryan; Smyth, Christopher M.; Hattar, Khalid; Harris, C. Thomas; Lu, Tzu-Ming; Haque, Aman; Wolfe, Douglas E.; Ren, Fan; Pearton, Stephen J.

doi:10.1088/1361-6463/ad3f29

Title: Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation

Journal Article · 25 April 2024 · Journal of Physics. D, Applied Physics

DOI: https://doi.org/10.1088/1361-6463/ad3f29 · OSTI ID:2341375

Rasel, Md Abu Jafar; Schoell, Ryan; Smyth, Christopher M.; Hattar, Khalid;

; Lu, Tzu-Ming;

; Wolfe, Douglas E.; Ren, Fan;

Abstract Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on gallium nitride high electron mobility transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 × 10 ¹² to 3.76 × 10 ¹⁴ cm ² , and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. high-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (∼750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.

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Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 2341375

Alternate ID(s):: OSTI ID: 2337744

Journal Information:: Journal of Physics. D, Applied Physics, Journal Name: Journal of Physics. D, Applied Physics Journal Issue: 29 Vol. 57; ISSN 0022-3727

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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