GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation

Karthikeyan, Sengunthar; Johnston, Steven W.; Gayakwad, Dhammapriy; Mahapatra, Suddhasatta; Bodnar, Robert J.; Zhao, Jing; Joshi, Rutwik; Hudait, Mantu K.

doi:10.1039/d3nr05904a

Title: GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation

Journal Article · 14 March 2024 · Nanoscale

DOI: https://doi.org/10.1039/d3nr05904a · OSTI ID:2340120

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^[3]; Mahapatra, Suddhasatta ^[3];

^[1]; Zhao, Jing ^[1];

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Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Indian Inst. of Technology (IIT), Bombay (India)

Group IV GeSn quantum material finds application in electronics and silicon-compatible photonics. Synthesizing these materials with low defect density and high carrier lifetime is a potential challenge due to lattice mismatch induced defects and tin segregation at higher growth temperature. Recent advancements in the growth of these GeSn materials on Si, Ge, GaAs, and with substrate orientations, demonstrated different properties using epitaxial and chemical deposition methods. This article addresses the effect of GaAs substrate orientation and misorientation on the materials’ properties and carrier lifetimes in epitaxial Ge_0.94Sn_0.06 layers. With starting GaAs substrates of (100)/2°, (100)/6°, (110) and (111)A orientations, Ge_0.94Sn_0.06 epitaxial layers were grown with an intermediate Ge buffer layer by molecular beam epitaxy and analyzed by several analytical tools. X-ray analysis displayed good crystalline quality, and Raman spectroscopy measurements showed blue shifts in phonon wavenumber due to biaxial compressive strain in Ge_0.94Sn_0.06 epilayers. Cross-sectional transmission electron microscopy analysis confirmed the defect-free heterointerface of Ge_0.94Sn_0.06/Ge/GaAs heterostructure. Minority carrier lifetimes of the unintentionally doped n-type Ge_0.94Sn_0.06 epilayers displayed photoconductive carrier lifetimes of >400 ns on (100)/6°, 319 ns on (100)/2°, and 434 ns on (110) GaAs substrate at 1500 nm excitation wavelength. On the other hand, Ge_0.94Sn_0.06 layer showed poor carrier lifetime on (111)A GaAs substrate. The observed differences in carrier lifetimes were correlated with the formation energy of the Ge on (100)/6° and (100)/2° GaAs heterointerface using Stillinger–Weber interatomic potential model-based atomistic simulation with different heterointerfacial bonding by Synopsys QuantumATK tool. Total energy computation of 6280-atom Ge/GaAs supercell on (100)/6° leads to lower formation energy than (100)/2°, making it more thermodynamically stable. Hence, the growth of the GeSn/III–V material system using misoriented (100) substrates that are more thermodynamically stable will enhance the performances of optoelectronic devices.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE; National Science Foundation (NSF)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 2340120

Report Number(s):: NREL/JA--5K00-89609; MainId:90388; UUID:13eca189-a3bb-48d5-ac77-c326e54a910b; MainAdminId:72401

Journal Information:: Nanoscale, Journal Name: Nanoscale Journal Issue: 14 Vol. 16; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Title: GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation

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