Nucleation Selectivity and Lateral Coalescence of GaAs over Graphene on Ge(111)

Manzo, Sebastian; Su, Katherine; Arnold, Michael S.; Kawasaki, Jason K.

doi:10.1021/acsami.3c13600

Title: Nucleation Selectivity and Lateral Coalescence of GaAs over Graphene on Ge(111)

Journal Article · 11 December 2023 · ACS Applied Materials and Interfaces

DOI: https://doi.org/10.1021/acsami.3c13600 · OSTI ID:2339631

^[1]; Su, Katherine ^[2]; Arnold, Michael S. ^[2];

^[2]

Univ. of Wisconsin, Madison, WI (United States); University of Wisconsin-Madison
Univ. of Wisconsin, Madison, WI (United States)

Here we use epitaxial lateral overgrowth (ELO) to produce semimetallic graphene nanostructures embedded in a semiconducting GaAs matrix for potential applications in plasmonics, THz generation and detection, and tunnel junctions in multijunction solar cells. We show that (1) the combination of low sticking coefficient and fast surface diffusion on graphene enhances nucleation selectivity at exposed regions of the substrate and (2) high growth temperatures favor efficient lateral overgrowth, coalescence, and planarization of epitaxial GaAs films over the graphene nanostructures. Our work provides a more complete understanding of ELO using graphene masks, as opposed to more conventional dielectric masks, and enables new types of metal/semiconductor nanocomposites.

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Research Organization:: Univ. of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Defense Advanced Research Projects Agency (DARPA); National Science Foundation (NSF)

Grant/Contract Number:: SC0016007; SC0023958

OSTI ID:: 2339631

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 51 Vol. 15; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
graphene
epitaxial lateral overgrowth
III-Vs
nanocomposites
molecular beam epitaxy

Title: Nucleation Selectivity and Lateral Coalescence of GaAs over Graphene on Ge(111)

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