Effect of Threading Dislocations on GaInP Front- and Rear-Junction Solar Cells Grown on Si
Journal Article
·
· IEEE Journal of Photovoltaics
- University of Illinois Urbana-Champaign, Champaign, IL, USA
Not Available
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- EE0008545
- OSTI ID:
- 2337981
- Journal Information:
- IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics; ISSN 2156-3381
- Publisher:
- Institute of Electrical and Electronics EngineersCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Challenges of relaxed n-type GaP on Si and strategies to enable low threading dislocation density
Reduction of Crosshatch Roughness and Threading Dislocation Density in Metamorphic GaInP Buffers and GaInAs Solar Cells
GaAsP solar cells on GaP/Si with low threading dislocation density
Journal Article
·
2021
· Journal of Applied Physics
·
OSTI ID:1978993
+4 more
Reduction of Crosshatch Roughness and Threading Dislocation Density in Metamorphic GaInP Buffers and GaInAs Solar Cells
Journal Article
·
2012
· Journal of Applied Physics
·
OSTI ID:1046870
+4 more
GaAsP solar cells on GaP/Si with low threading dislocation density
Journal Article
·
2016
· Applied Physics Letters
·
OSTI ID:22594422