Effect of niobium doping on excitonic dynamics in MoSe2

Wang, Wenjie; Wang, Yongsheng; He, Jiaqi; Bai, Zhiying; Li, Guili; Zhang, Xiaoxian; He, Dawei; Zhao, Hui

doi:10.1088/2053-1583/ad3b0d

Title: Effect of niobium doping on excitonic dynamics in MoSe₂

Journal Article · 16 April 2024 · 2D Materials

DOI: https://doi.org/10.1088/2053-1583/ad3b0d · OSTI ID:2337805

Wang, Wenjie ^[1]; Wang, Yongsheng ^[2]; He, Jiaqi ^[3]; Bai, Zhiying ^[2]; Li, Guili ^[2]; Zhang, Xiaoxian ^[2]; He, Dawei ^[2];

^[4]

Beijing Jiaotong University (China); University of Kansas
Beijing Jiaotong University (China)
Beijing University of Chemical Technology (China)
Univ. of Kansas, Lawrence, KS (United States)

Transition metal dichalcogenides (TMDs) have emerged as attractive two-dimensional semiconductors for future electronic and optoelectronic applications. Their charge transport properties, such as conductivity and the type of charge carriers, can be effectively controlled by substitutional doping of the transition metal atoms. However, the effects of doping on the excitonic properties, particularly their dynamical properties, have been less studied. Using Nb-doped MoSe₂ as a case study, we experimentally investigate the effect of doping on excitonic dynamics in TMDs. Transient absorption measurements are used to directly compare the dynamical properties of excitons in Nb-doped MoSe₂ across monolayer, bilayer, and bulk flakes with their undoped counterparts. The exciton lifetimes in Nb-doped flakes are significantly shorter than those in their undoped counterparts. This effect is attributed to the trapping of excitons in defect states introduced by Nb impurities. These results reveal an important consequence of Nb doping on excitonic dynamics in TMDs.

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Research Organization:: Univ. of Kansas, Lawrence, KS (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); National Key Research and Development Program of China; National Natural Science Foundation of China (NSFC); Beijing Natural Science Foundation

Grant/Contract Number:: SC0020995

OSTI ID:: 2337805

Alternate ID(s):: OSTI ID: 2335396; OSTI ID: 2337998

Journal Information:: 2D Materials, Journal Name: 2D Materials Journal Issue: 3 Vol. 11; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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77 NANOSCIENCE AND NANOTECHNOLOGY
doping
two-dimensional material
exciton
transient absorption

Title: Effect of niobium doping on excitonic dynamics in MoSe2

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Title: Effect of niobium doping on excitonic dynamics in MoSe₂