Chemically tuned intermediate band states in atomically thin CuxGeSe/SnS quantum material for photovoltaic applications

Kastuar, Srihari M.; Ekuma, Chinedu E.

doi:10.1126/sciadv.adl6752

Title: Chemically tuned intermediate band states in atomically thin Cu_xGeSe/SnS quantum material for photovoltaic applications

Journal Article · 09 April 2024 · Science Advances

DOI: https://doi.org/10.1126/sciadv.adl6752 · OSTI ID:2337703

^[1];

^[2]

Lehigh University, Bethlehem, PA (United States); Lehigh University
Lehigh University, Bethlehem, PA (United States)

A new generation of quantum material derived from intercalating zerovalent atoms such as Cu into the intrinsic van der Waals gap at the interface of atomically thin two-dimensional GeSe/SnS heterostructure is designed, and their optoelectronic features are explored for next-generation photovoltaic applications. Advanced ab initio modeling reveals that many-body effects induce intermediate band (IB) states, with subband gaps (~0.78 and 1.26 electron volts) ideal for next-generation solar devices, which promise efficiency greater than the Shockley-Queisser limit of ~32%. The charge carriers across the heterojunction are both energetically and spontaneously spatially confined, reducing nonradiative recombination and boosting quantum efficiency. Using this IB material in a solar cell prototype enhances absorption and carrier generation in the near-infrared to visible light range. Tuning the active layer’s thickness increases optical activity at wavelengths greater than 600 nm, achieving ~190% external quantum efficiency over a broad solar wavelength range, underscoring its potential in advanced photovoltaic technology.

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Research Organization:: Lehigh University, Bethlehem, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); National Science Foundation (NSF)

Grant/Contract Number:: SC0024099

OSTI ID:: 2337703

Journal Information:: Science Advances, Journal Name: Science Advances Journal Issue: 15 Vol. 10; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Chemically tuned intermediate band states in atomically thin CuxGeSe/SnS quantum material for photovoltaic applications

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Title: Chemically tuned intermediate band states in atomically thin Cu_xGeSe/SnS quantum material for photovoltaic applications