In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III–V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants

McMahon, William E.; Braun, Anna K.; Perna, Allison N.; Coll, Pablo G.; Schulte, Kevin L.; Boyer, Jacob T.; Neumann, Anica N.; Geisz, John F.; Warren, Emily L.; Ptak, Aaron J.; Merkle, Arno P.; Bertoni, Mariana I.; Packard, Corinne E.; Steiner, Myles A.

doi:10.1021/acs.cgd.3c01407

Title: In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III–V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants

Journal Article · 31 March 2024 · Crystal Growth and Design

DOI: https://doi.org/10.1021/acs.cgd.3c01407 · OSTI ID:2331507

^[1]; Braun, Anna K. ^[2]; Perna, Allison N. ^[2]; Coll, Pablo G. ^[3];

^[1]; Boyer, Jacob T. ^[1]; Neumann, Anica N. ^[4]; Geisz, John F. ^[1];

^[1]; Ptak, Aaron J. ^[1]; Merkle, Arno P. ^[3];

^[5];

^[4]; Steiner, Myles A. ^[1]

National Renewable Energy Laboratory, Golden, Colorado 80401, United States
Colorado School of Mines, Golden, Colorado 80401, United States
Crystal Sonic Inc., Phoenix, Arizona 85003, United States
National Renewable Energy Laboratory, Golden, Colorado 80401, United States, Colorado School of Mines, Golden, Colorado 80401, United States
Crystal Sonic Inc., Phoenix, Arizona 85003, United States, Arizona State University, Tempe, Arizona 85287, United States

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Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 2331507

Alternate ID(s):: OSTI ID: 2337791; OSTI ID: 2341522

Journal Information:: Crystal Growth and Design, Journal Name: Crystal Growth and Design Journal Issue: 8 Vol. 24; ISSN 1528-7483

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: France

Language:: English

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