Two-Level Quantum Systems in Two-Dimensional Materials for Single Photon Emission
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December 2018 |
Solid-state single-photon emitters
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September 2016 |
Four modifications of the Jahn–Teller effects. The problem of observables: spin–orbit interaction, tunneling splitting, and orientational polarization of solids
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January 2023 |
Rhenium-doped MoS 2 films
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November 2017 |
Projector augmented-wave method
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December 1994 |
Ab initio theory of the nitrogen-vacancy center in diamond
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September 2019 |
Intrinsic Defects in MoS2 Grown by Pulsed Laser Deposition: From Monolayers to Bilayers
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February 2021 |
Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS 2 systems
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March 2013 |
Mechanism of high-resolution STM/AFM imaging with functionalized tips
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August 2014 |
Room-temperature entanglement between single defect spins in diamond
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February 2013 |
Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide
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November 2020 |
How Substitutional Point Defects in Two-Dimensional WS 2 Induce Charge Localization, Spin–Orbit Splitting, and Strain
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August 2019 |
Molecules on Insulating Films: Scanning-Tunneling Microscopy Imaging of Individual Molecular Orbitals
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January 2005 |
Variations of paramagnetic defects and dopants in geo-MoS2 from diverse localities probed by ESR
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June 2020 |
Stark Tuning of Single-Photon Emitters in Hexagonal Boron Nitride
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June 2018 |
Epitaxial Graphene Transistors: Enhancing Performance via Hydrogen Intercalation
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September 2011 |
Controllable p‐Type Doping of 2D WSe 2 via Vanadium Substitution
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July 2021 |
Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS 2
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May 2020 |
Jahn-Teller-induced femtosecond electronic depolarization dynamics of the nitrogen-vacancy defect in diamond
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November 2016 |
The Jahn-Teller and pseudo Jahn-Teller effect in materials science
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May 2017 |
Electronic and magnetic properties of single chalcogen vacancies in MoS2/Au(111)
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October 2023 |
Large Spin-Orbit Splitting of Deep In-Gap Defect States of Engineered Sulfur Vacancies in Monolayer WS 2
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August 2019 |
2D materials for quantum information science
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August 2019 |
Properties of Individual Dopant Atoms in Single-Layer MoS 2 : Atomic Structure, Migration, and Enhanced Reactivity
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February 2014 |
Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride
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September 2017 |
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
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September 2013 |
Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping
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July 2012 |
Imaging Bond Formation Between a Gold Atom and Pentacene on an Insulating Surface
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May 2006 |
First-principles calculations for charged defects at surfaces, interfaces, and two-dimensional materials in the presence of electric fields
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May 2018 |
Material platforms for spin-based photonic quantum technologies
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April 2018 |
Native defects in bulk and monolayer MoS 2 from first principles
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March 2015 |
The Chemical Structure of a Molecule Resolved by Atomic Force Microscopy
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August 2009 |
Resonant and bound states of charged defects in two-dimensional semiconductors
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February 2020 |
Dilute Rhenium Doping and its Impact on Defects in MoS2
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August 2023 |
Quantum emission from hexagonal boron nitride monolayers
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October 2015 |
Special points for Brillouin-zone integrations
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June 1976 |
Electronic and magnetic properties of Re-doped single-layer MoS2: A DFT study
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February 2017 |
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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October 1996 |
Stability of charged sulfur vacancies in 2D and bulk MoS2 from plane-wave density functional theory with electrostatic corrections
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June 2020 |
Quantum technologies with optically interfaced solid-state spins
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August 2018 |
Different tips for high-resolution atomic force microscopy and scanning tunneling microscopy of single molecules
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February 2013 |
Engineering topological states in atom-based semiconductor quantum dots
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June 2022 |
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides
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July 2019 |
Dimensionality-Inhibited Chemical Doping in Two-Dimensional Semiconductors: The Phosphorene and MoS2 from Charge-Correction Method
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July 2021 |
High-speed force sensor for force microscopy and profilometry utilizing a quartz tuning fork
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December 1998 |
Tuning transport across MoS2/graphene interfaces via as-grown lateral heterostructures
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May 2020 |
WSe 2 homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates
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January 2019 |
Jahn–Teller and Pseudo-Jahn–Teller Effects: From Particular Features to General Tools in Exploring Molecular and Solid State Properties
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December 2020 |
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
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May 2013 |
Spin-dependent vibronic response of a carbon radical ion in two-dimensional WS2
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December 2021 |
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
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February 2009 |
Monolayer semiconductor nanocavity lasers with ultralow thresholds
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March 2015 |
Ab initio calculation of spin-orbit coupling for an NV center in diamond exhibiting dynamic Jahn-Teller effect
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August 2017 |
Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature
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February 2020 |
Universal control of a six-qubit quantum processor in silicon
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September 2022 |
The role of chalcogen vacancies for atomic defect emission in MoS2
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June 2021 |
Site-selectively generated photon emitters in monolayer MoS2 via local helium ion irradiation
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June 2019 |
Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths
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December 2022 |
From ultrasoft pseudopotentials to the projector augmented-wave method
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January 1999 |