β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Herath Mudiyanselage, Dinusha; Da, Bingcheng; Adivarahan, Jayashree; Wang, Dawei; He, Ziyi; Fu, Kai; Zhao, Yuji; Fu, Houqiang

doi:10.3390/electronics13071234

Title: β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

Journal Article · 27 March 2024 · Electronics

DOI: https://doi.org/10.3390/electronics13071234 · OSTI ID:2329356

;

; Adivarahan, Jayashree; Wang, Dawei; He, Ziyi;

; Zhao, Yuji; Fu, Houqiang

During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0021230

OSTI ID:: 2329356

Journal Information:: Electronics, Journal Name: Electronics Vol. 13 Journal Issue: 7; ISSN 2079-9292

Publisher:: MDPI AGCopyright Statement

Country of Publication:: Switzerland

Language:: English

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A review of gallium oxide-based power Schottky barrier diodes Ji, Xueqiang; Lu, Chao; Yan, Zuyong Journal of Physics D: Applied Physics, Vol. 55, Issue 44 https://doi.org/10.1088/1361-6463/ac855c	journal	September 2022
Annealing temperature dependence of band alignment of NiO/β-Ga₂O₃ Xia, Xinyi; Li, Jian-Sian; Chiang, Chao-Ching Journal of Physics D: Applied Physics, Vol. 55, Issue 38 https://doi.org/10.1088/1361-6463/ac7e84	journal	July 2022
Normally-off β-Ga₂O₃ Power Heterojunction Field-Effect-Transistor Realized by p-NiO and Recessed-Gate Zhou, Xuanze; Liu, Qi; Hao, Weibing 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) https://doi.org/10.1109/ISPSD49238.2022.9813678	conference	May 2022
Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties Goto, Ken; Konishi, Keita; Murakami, Hisashi Thin Solid Films, Vol. 666 https://doi.org/10.1016/j.tsf.2018.09.006	journal	November 2018
Demonstration of 4.7 kV breakdown voltage in NiO/ β -Ga2O3 vertical rectifiers Li, Jian-Sian; Chiang, Chao-Ching; Xia, Xinyi Applied Physics Letters, Vol. 121, Issue 4 https://doi.org/10.1063/5.0097564	journal	July 2022
A 1.86-kV double-layered NiO/ β -Ga2O3 vertical p–n heterojunction diode Gong, H. H.; Chen, X. H.; Xu, Y. Applied Physics Letters, Vol. 117, Issue 2 https://doi.org/10.1063/5.0010052	journal	July 2020
NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells Zhang, Bingjuan; Su, Jie; Guo, Xing Advanced Science, Vol. 7, Issue 11 https://doi.org/10.1002/advs.201903044	journal	April 2020
Progress in state-of-the-art technologies of Ga₂O₃ devices Wang, Chenlu; Zhang, Jincheng; Xu, Shengrui Journal of Physics D: Applied Physics, Vol. 54, Issue 24 https://doi.org/10.1088/1361-6463/abe158	journal	March 2021
β-(Al _0.18 Ga _0.82 ) ₂ O ₃ /Ga ₂ O ₃ Double Heterojunction Transistor With Average Field of 5.5 MV/cm Kalarickal, Nidhin Kurian; Xia, Zhanbo; Huang, Hsien-Lien IEEE Electron Device Letters, Vol. 42, Issue 6 https://doi.org/10.1109/LED.2021.3072052	journal	June 2021
Polycrystalline diamond growth on β-Ga ₂ O ₃ for thermal management Malakoutian, Mohamadali; Song, Yiwen; Yuan, Chao Applied Physics Express, Vol. 14, Issue 5 https://doi.org/10.35848/1882-0786/abf4f1	journal	April 2021
NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV Wan, Hsiao-Hsuan; Li, Jian-Sian; Chiang, Chao-Ching Journal of Vacuum Science & Technology A, Vol. 41, Issue 3 https://doi.org/10.1116/6.0002393	journal	March 2023
Characterization of nanocrystalline nickel oxide thin films prepared at different thermal oxidation temperatures Hajakbari, Fatemeh Journal of Nanostructure in Chemistry, Vol. 10, Issue 1 https://doi.org/10.1007/s40097-020-00332-2	journal	February 2020
SnO/β-Ga₂O₃ heterojunction field-effect transistors and vertical p–n diodes Tetzner, Kornelius; Egbo, Kingsley; Klupsch, Michael Applied Physics Letters, Vol. 120, Issue 11 https://doi.org/10.1063/5.0083032	journal	March 2022
β-Ga2O3 material properties, growth technologies, and devices: a review Higashiwaki, Masataka AAPPS Bulletin, Vol. 32, Issue 1 https://doi.org/10.1007/s43673-021-00033-0	journal	January 2022
Demonstration of β-(Al _x Ga ₁₋ _x ) ₂ O ₃ /β-Ga ₂ O ₃ modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy Ahmadi, Elaheh; Koksaldi, Onur S.; Zheng, Xun Applied Physics Express, Vol. 10, Issue 7 https://doi.org/10.7567/APEX.10.071101	journal	June 2017
Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding Sittimart, Phongsaphak; Ohmagari, Shinya; Matsumae, Takashi AIP Advances, Vol. 11, Issue 10 https://doi.org/10.1063/5.0062531	journal	October 2021
Understanding the Breakdown Behavior of Ultrawide‐Bandgap Boron Nitride Power Diodes Using Device Modeling He, Ziyi; Fu, Kai; Xu, Mingfei physica status solidi (RRL) – Rapid Research Letters https://doi.org/10.1002/pssr.202200397	journal	January 2023
Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga₂O₃ Leblanc, Chloe; Herath Mudiyanselage, Dinusha; Song, Seunguk Nanoscale, Vol. 15, Issue 23 https://doi.org/10.1039/D3NR01987J	journal	January 2023
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Schottky barrier height of Ni to β -(Al _x Ga _1−x ) ₂ O ₃ with different compositions grown by plasma-assisted molecular beam epitaxy Ahmadi, Elaheh; Oshima, Yuichi; Wu, Feng Semiconductor Science and Technology, Vol. 32, Issue 3 https://doi.org/10.1088/1361-6641/aa53a7	journal	January 2017
Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices Ma, Yunwei; Qin, Yuan; Porter, Matthew Advanced Electronic Materials https://doi.org/10.1002/aelm.202300662	journal	December 2023
MOCVD growth of high purity Ga ₂ O ₃ epitaxial films using trimethylgallium precursor Seryogin, George; Alema, Fikadu; Valente, Nicholas Applied Physics Letters, Vol. 117, Issue 26 https://doi.org/10.1063/5.0031484	journal	December 2020
2.41 kV Vertical P-Nio/n-Ga₂O₃ Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm² Wang, Yuan; Gong, Hehe; Lv, Yuanjie IEEE Transactions on Power Electronics, Vol. 37, Issue 4 https://doi.org/10.1109/TPEL.2021.3123940	journal	April 2022
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High electron density β -(Al _0.17 Ga _0.83 ) ₂ O ₃ /Ga ₂ O ₃ modulation doping using an ultra-thin (1 nm) spacer layer Kalarickal, Nidhin Kurian; Xia, Zhanbo; McGlone, Joe F. Journal of Applied Physics, Vol. 127, Issue 21 https://doi.org/10.1063/5.0005531	journal	June 2020
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A Review on Gallium Oxide Materials from Solution Processes Chiang, Jung-Lung; Yadlapalli, Bharath Kumar; Chen, Mu-I Nanomaterials, Vol. 12, Issue 20 https://doi.org/10.3390/nano12203601	journal	October 2022
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Vertical β-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer Xu, Mingfei; Biswas, Abhijit; Li, Tao Applied Physics Letters, Vol. 123, Issue 23 https://doi.org/10.1063/5.0176578	journal	December 2023
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NiO junction termination extension for high-voltage (>3 kV) Ga2O3 devices Xiao, Ming; Wang, Boyan; Spencer, Joseph Applied Physics Letters, Vol. 122, Issue 18 https://doi.org/10.1063/5.0142229	journal	May 2023
2.6 kV NiO/Ga₂O₃ Heterojunction Diode with Superior High-Temperature Voltage Blocking Capability Hao, Weibing; He, Qiming; Zhou, Xuanze 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) https://doi.org/10.1109/ISPSD49238.2022.9813680	conference	May 2022

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