Sub‐Diffraction Correlation of Quantum Emitters and Local Strain Fields in Strain‐Engineered WSe 2 Monolayers

Xu, David D.; Vong, Albert F.; Utama, M. Iqbal Bakti; Lebedev, Dmitry; Ananth, Riddhi; Hersam, Mark C.; Weiss, Emily A.; Mirkin, Chad A.

doi:10.1002/adma.202314242

Title: Sub‐Diffraction Correlation of Quantum Emitters and Local Strain Fields in Strain‐Engineered WSe ₂ Monolayers

Journal Article · 25 March 2024 · Advanced Materials

DOI: https://doi.org/10.1002/adma.202314242 · OSTI ID:2328662

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Department of Chemistry Northwestern University 2145 Sheridan Road Evanston IL 60208 USA, International Institute for Nanotechnology Northwestern University 2145 Sheridan Road Evanston IL 60208 USA
International Institute for Nanotechnology Northwestern University 2145 Sheridan Road Evanston IL 60208 USA, Department of Materials Science and Engineering Northwestern University 2220 Campus Drive Evanston IL 60208 USA
Department of Materials Science and Engineering Northwestern University 2220 Campus Drive Evanston IL 60208 USA
Department of Chemistry Northwestern University 2145 Sheridan Road Evanston IL 60208 USA, International Institute for Nanotechnology Northwestern University 2145 Sheridan Road Evanston IL 60208 USA, Department of Materials Science and Engineering Northwestern University 2220 Campus Drive Evanston IL 60208 USA, Department of Electrical and Computer Engineering Northwestern University 2145 Sheridan Road Evanston IL 60208 USA
Department of Chemistry Northwestern University 2145 Sheridan Road Evanston IL 60208 USA, International Institute for Nanotechnology Northwestern University 2145 Sheridan Road Evanston IL 60208 USA, Department of Materials Science and Engineering Northwestern University 2220 Campus Drive Evanston IL 60208 USA

Abstract Strain‐engineering in atomically thin metal dichalcogenides is a useful method for realizing single‐photon emitters (SPEs) for quantum technologies. Correlating SPE position with local strain topography is challenging due to localization inaccuracies from the diffraction limit. Currently, SPEs are assumed to be positioned at the highest strained location and are typically identified by randomly screening narrow‐linewidth emitters, of which only a few are spectrally pure. In this work, hyperspectral quantum emitter localization microscopy is used to locate 33 SPEs in nanoparticle‐strained WSe ₂ monolayers with sub‐diffraction‐limit resolution (≈30 nm) and correlate their positions with the underlying strain field via image registration. In this system, spectrally pure emitters are not concentrated at the highest strain location due to spectral contamination; instead, isolable SPEs are distributed away from points of peak strain with an average displacement of 240 nm. These observations point toward a need for a change in the design rules for strain‐engineered SPEs and constitute a key step toward realizing next‐generation quantum optical architectures.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0021314

OSTI ID:: 2328662

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 25 Vol. 36; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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