Oxygen tracer diffusion in amorphous hafnia films for resistive memory

Shin, Dongjae; Ievlev, Anton V.; Beckmann, Karsten; Li, Jingxian; Ren, Pengyu; Cady, Nathaniel; Li, Yiyang

doi:10.1039/D3MH02113K

Title: Oxygen tracer diffusion in amorphous hafnia films for resistive memory

Journal Article · 19 May 2024 · Materials Horizons

DOI: https://doi.org/10.1039/D3MH02113K · OSTI ID:2326138

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Materials Science and Engineering, University of Michigan, Ann Arbor, MI, USA
Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, TN, USA
College of Nanotechnology, Science and Engineering, University at Albany, Albany, NY, USA, NY CREATES, Albany, NY, USA
College of Nanotechnology, Science and Engineering, University at Albany, Albany, NY, USA

We quantified the oxygen tracer diffusion in amorphous hafnium oxide thin films. These tracer diffusion values are consistent with the experimentally measured retention times of hafnium oxide resistive memory devices.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: NONE; AC05-00OR22725

OSTI ID:: 2326138

Alternate ID(s):: OSTI ID: 2441042

Journal Information:: Materials Horizons, Journal Name: Materials Horizons Journal Issue: 10 Vol. 11; ISSN 2051-6347; ISSN MHAOAL

Publisher:: Royal Society of Chemistry (RSC)Copyright Statement

Country of Publication:: United Kingdom

Language:: English

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