Local atomic stacking and symmetry in twisted graphene trilayers
- University of California, Berkeley, CA (United States); SLAC
- University of California, Berkeley, CA (United States)
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
- National Institute for Materials Science, Tsukuba (Japan)
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Molecular Foundry; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Materials Sciences Division
- University of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Moiré superlattices formed from twisting trilayers of graphene are an ideal model for studying electronic correlation, and offer several advantages over bilayer analogues, including more robust and tunable superconductivity and a wide range of twist angles associated with flat band formation. Atomic reconstruction, which strongly impacts the electronic structure of twisted graphene structures, has been suggested to play a major role in the relative versatility of superconductivity in trilayers. Here, we exploit an inteferometric 4D-STEM approach to image a wide range of trilayer graphene structures. Here, our results unveil a considerably different model for moiré lattice relaxation in trilayers than that proposed from previous measurements, informing a thorough understanding of how reconstruction modulates the atomic stacking symmetries crucial for establishing superconductivity and other correlated phases in twisted graphene trilayers.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
- Sponsoring Organization:
- 3M Foundation; Air Force Research Laboratory; Army Research Office (ARO); Canadian Institute for Advanced Research; Gordon and Betty Moore Foundation; Japan Society for the Promotion of Science (JSPS); National Science Foundation (NSF); Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); W.M. Keck Foundation
- Grant/Contract Number:
- AC02-05CH11231; AC02-76SF00515
- OSTI ID:
- 2323399
- Journal Information:
- Nature Materials, Journal Name: Nature Materials Journal Issue: 3 Vol. 23; ISSN 1476-1122
- Publisher:
- Springer NatureCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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