Doped semiconductor devices for sub-MeV dark matter detection
Journal Article
·
· Physical Review. D.
Dopant atoms in semiconductors can be ionized with energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark matter absorption on electrons. Currently unconstrained cross sections could be tested with a 1 g-day exposure in a doped detector with backgrounds at the level of existing pure semiconductor detectors, but improvements would be needed to probe the freeze-in target. We discuss the corresponding technological requirements and lay out a possible detector design. Published by the American Physical Society 2024
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- SC0010008; SC0009854; SC0009919; SC0022104
- OSTI ID:
- 2320325
- Journal Information:
- Physical Review. D., Journal Name: Physical Review. D. Journal Issue: 5 Vol. 109; ISSN PRVDAQ; ISSN 2470-0010
- Publisher:
- American Physical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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