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Title: Doped semiconductor devices for sub-MeV dark matter detection

Journal Article · · Physical Review. D.

Dopant atoms in semiconductors can be ionized with 10 meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark matter absorption on electrons. Currently unconstrained cross sections could be tested with a 1 g-day exposure in a doped detector with backgrounds at the level of existing pure semiconductor detectors, but improvements would be needed to probe the freeze-in target. We discuss the corresponding technological requirements and lay out a possible detector design. Published by the American Physical Society 2024

Sponsoring Organization:
USDOE
Grant/Contract Number:
SC0010008; SC0009854; SC0009919; SC0022104
OSTI ID:
2320325
Journal Information:
Physical Review. D., Journal Name: Physical Review. D. Journal Issue: 5 Vol. 109; ISSN PRVDAQ; ISSN 2470-0010
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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