Transient Evolution of the Built-in Field at Junctions of GaAs

Chen, Xihan; Pekarek, Ryan T.; Gu, Jing; Zakutayev, Andriy; Hurst, Katherine E.; Neale, Nathan R.; Yang, Ye; Beard, Matthew C.

doi:10.1021/acsami.0c11474

Title: Transient Evolution of the Built-in Field at Junctions of GaAs

Journal Article · 17 August 2020 · ACS Applied Materials and Interfaces

DOI: https://doi.org/10.1021/acsami.0c11474 · OSTI ID:2316099

^[1]; Pekarek, Ryan T. ^[1];

^[2];

^[1]; Hurst, Katherine E. ^[1];

^[1];

^[3];

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Materials and Chemical Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States
Materials and Chemical Science and Technology Directorate, National Renewable Energy Laboratory, Golden, Colorado 80401, United States, Department of Chemistry and Biochemistry, San Diego State University, San Diego, California 92182, United States
State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, Fujian 361005, P. R. China

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: National Natural Science Foundation of China (NNSFC); USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 2316099

Report Number(s):: NREL/JA-5900-76807

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 36 Vol. 12; ISSN 1944-8244

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Transient Evolution of the Built-in Field at Junctions of GaAs

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