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Title: Tunnel ionization within a one-dimensional, undriven plasma sheath

Journal Article · · AIP Advances
DOI: https://doi.org/10.1063/5.0142250 · OSTI ID:2311763

In high density, high temperature plasmas, the plasma sheath that develops can result in extremely high electric fields, on the order of tens to hundreds of V/nm. Under the right conditions, these electric fields can reach magnitudes that can increase the probability of electron tunneling ionization to occur, resulting in one or more electron-ion pairs. The presence of tunneling ionization can then modify the development of the plasma sheath, as well as properties such as the ion and electron densities and plasma potential. The tunnel ionization process for hydrogen atoms is demonstrated, in this work, as implemented in a Sandia National Laboratories, particle-in-cell code Aleph. Results are presented for the application of the tunnel ionization process to a one-dimensional, undriven plasma sheath. Additional results for cases that consider warm ions and neutrals, the inclusion of electron–neutral collisions, and the injection of neutral particles, as well as the application to various plasma devices, will be discussed.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
NA0003525
OSTI ID:
2311763
Report Number(s):
SAND--2023-03469J
Journal Information:
AIP Advances, Journal Name: AIP Advances Journal Issue: 5 Vol. 13; ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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