Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Singh, Tejinder; Hummel, Gwendolyn; Vaseem, Mohammad; Shamim, Atif

doi:10.1109/jmw.2023.3247360

Title: Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Journal Article · 16 March 2023 · IEEE Journal of Microwaves

DOI: https://doi.org/10.1109/jmw.2023.3247360 · OSTI ID:2311605

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Dell Technologies, Ottawa, ON (Canada); Univ. of Waterloo, ON (Canada)
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
King Abdullah University of Science and Technology (KAUST), Thuwal (Saudi Arabia)

Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO ₂ ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 2311605

Report Number(s):: SAND--2023-03000J

Journal Information:: IEEE Journal of Microwaves, Journal Name: IEEE Journal of Microwaves Journal Issue: 2 Vol. 3; ISSN 2692-8388

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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