Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells
Journal Article
·
· IEEE Journal of Photovoltaics
- Department of Information Engineering, University of Padova, Padova, Italy
- University of Cagliari, Cagliari, Italy
- CNR IMEM, Parma, Italy
- School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ, USA
Not Available
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- SC0021230
- OSTI ID:
- 2305577
- Alternate ID(s):
- OSTI ID: 2305579
- Journal Information:
- IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 6 Vol. 13; ISSN 2156-3381
- Publisher:
- Institute of Electrical and Electronics EngineersCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance
Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes
Influence of Barrier Thickness on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells.
Journal Article
·
2023
· IEEE Transactions on Electron Devices
·
OSTI ID:2421824
+8 more
Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes
Journal Article
·
2014
· Journal of Applied Physics
·
OSTI ID:22402612
+2 more
Influence of Barrier Thickness on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells.
Journal Article
·
2012
· Proposed for publication in Applied Physics Letters.
·
OSTI ID:1062915