Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Cheng, Qianyu; Chen, Zeyu; Hu, Shanshan; Liu, Yafei; Raghothamachar, Balaji; Dudley, Michael

doi:10.1016/j.mssp.2024.108207

Title: Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Journal Article · 30 April 2024 · Materials Science in Semiconductor Processing

DOI: https://doi.org/10.1016/j.mssp.2024.108207 · OSTI ID:2305552

Cheng, Qianyu; Chen, Zeyu; Hu, Shanshan; Liu, Yafei;

; Dudley, Michael

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0001028; AC02-06CH11357; SC0012704

OSTI ID:: 2305552

Journal Information:: Materials Science in Semiconductor Processing, Journal Name: Materials Science in Semiconductor Processing Journal Issue: C Vol. 174; ISSN 1369-8001

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

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