Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells

Mouri, Tasnim Kamal; Upadhyaya, Ajay; Rohatgi, Ajeet; Ok, Young-Woo; Upadhyaya, Vijaykumar; Rounsaville, Brian; Hua, Amandee; Hauschild, Dirk; Weinhardt, Lothar; Heske, Clemens; Das, Ujjwal K.

doi:10.1109/jphotov.2023.3338095

Title: Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells

Journal Article · 10 December 2023 · IEEE Journal of Photovoltaics

DOI: https://doi.org/10.1109/jphotov.2023.3338095 · OSTI ID:2290343

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^[2]; Upadhyaya, Vijaykumar ^[2]; Rounsaville, Brian ^[2];

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University of Delaware, Newark, DE (United States); University of Delaware
Georgia Institute of Technology, Atlanta, GA (United States)
University of Nevada Las Vegas (UNLV), NV (United States)
University of Nevada Las Vegas (UNLV), NV (United States); Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen (Germany)
University of Delaware, Newark, DE (United States)

This work reports on the application of sulfur (S)-passivation to passivated emitter and rear contact (PERC) solar cells. The emitter surface was passivated by hydrogen sulfide (H₂S) gas phase reaction and capped by a hydrogenated amorphous silicon nitride (a-SiN_x:H) layer. The sulfur passivation on a symmetrically n⁺ diffused emitter is shown to lead to an emitter saturation current density (J_0n+) of 30 fA/cm² at R_sheet,n+ ≈ 100 Ω/sq. The application of S-passivation to the emitter surface in the PERC cell structure, with the rear surface passivated by an aluminum oxide (Al₂O₃)/a-SiN_x:H stack, showed a promising implied open-circuit voltage (iV_OC) of 686 mV before metallization. This iV_OC was higher than that for the a-SiN_x:H or SiO₂/a-SiN_x:H passivated emitter surfaces (675 and 674 mV, respectively) on PERC cells processed in the same run. However, a significant drop in cell V_OC is observed for the S-passivated PERC cell after the completion of device fabrication with laser patterning, screen-printed metal contact deposition, and firing. Nonetheless, an efficiency of ~20% and a V_OC of ~650 mV was achieved with an emitter surface passivated by sulfur. We identified that the 760°C contact firing process degrades the S-passivation quality. Furthermore, the surface morphology was studied, and a detailed surface analysis was performed to study the causes of the S-passivated surface degradation.

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Research Organization:: University of Delaware, Newark, DE (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: EE0008554

OSTI ID:: 2290343

Journal Information:: IEEE Journal of Photovoltaics, Journal Name: IEEE Journal of Photovoltaics Journal Issue: 2 Vol. 14; ISSN 2156-3381

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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14 SOLAR ENERGY
n+ diffused emitter
hydrogen sulfide reaction passivation
screen printed metal contact firing
X-ray photoelectron spectroscopy
p-PERC cell

Title: Hydrogen Sulfide Passivation for p-Type Passivated Emitter and Rear Contact Solar Cells

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