Increased light-emission efficiency in disordered (In, Ga)N through the correlated reduction of recombination rates

Pant, Nick; Kioupakis, Emmanouil

doi:10.1103/physrevapplied.20.064049

Title: Increased light-emission efficiency in disordered (In, Ga)N through the correlated reduction of recombination rates

Journal Article · 28 December 2023 · Physical Review Applied

DOI: https://doi.org/10.1103/physrevapplied.20.064049 · OSTI ID:2287650

^[1];

^[2]

University of Michigan, Ann Arbor, MI (United States); University of Michigan
University of Michigan, Ann Arbor, MI (United States)

Experiments have shown that the light-emission efficiency of indium gallium nitride (InGaN) lightemitting diodes improves with increasing indium concentration. It is widely thought that compositional fluctuations due to indium incorporation suppress diffusion of carriers to non-radiative centers, thus leading to defect-insensitive emission. However, recent experiments have challenged this hypothesis by revealing unexpectedly long diffusion lengths at room temperature. Here, we demonstrate an alternative mechanism involving the correlated reduction in radiative and nonradiative recombination rates that explains the increase in light-emission efficiency of InGaN with increasing indium concentration, without invoking the suppression of carrier diffusion. Furthermore, our analysis challenges the notion that carrier localization gives rise to defect tolerance in InGaN.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Lumileds Lighting U.S., LLC, San Jose, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: AC02-05CH11231; EE0009163

OSTI ID:: 2287650

Report Number(s):: DOE-LUMI-UMICH--01-9163

Journal Information:: Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 6 Vol. 20; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

References (101)

Efficiency droop in light-emitting diodes: Challenges and countermeasures: Efficiency droop in light-emitting diodes: Challenges and countermeasures Cho, Jaehee; Schubert, E. Fred; Kim, Jong Kyu Laser & Photonics Reviews, Vol. 7, Issue 3 https://doi.org/10.1002/lpor.201200025	journal	January 2013
Atomistic analysis of the electronic structure of m‐plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations Tanner, Daniel P.; Caro, Miguel A.; O'Reilly, Eoin P. physica status solidi (b), Vol. 253, Issue 5 https://doi.org/10.1002/pssb.201552642	journal	December 2015
Deep‐Level Defects and Impurities in InGaN Alloys Wickramaratne, Darshana; Dreyer, Cyrus E.; Shen, Jimmy-Xuan physica status solidi (b), Vol. 257, Issue 4 https://doi.org/10.1002/pssb.201900534	journal	April 2020
Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence Becht, Conny; Schwarz, Ulrich T.; Binder, Michael physica status solidi (b), Vol. 260, Issue 8 https://doi.org/10.1002/pssb.202200565	journal	March 2023
Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures Langer, Torsten; Kruse, Andreas; Ketzer, Fedor Alexej physica status solidi (c), Vol. 8, Issue 7-8 https://doi.org/10.1002/pssc.201001051	journal	May 2011
The influence of temperature on the recombination processes in blue and green InGaN LEDs Crutchley, Benjamin G.; Marko, Igor P.; Sweeney, Stephen J. physica status solidi c, Vol. 10, Issue 11 https://doi.org/10.1002/pssc.201300360	journal	October 2013
Electronic Structure Martin, Richard M. https://doi.org/10.1017/9781108555586	book	September 2020
Ab Initio Nonadiabatic Quantum Molecular Dynamics Curchod, Basile F. E.; Martínez, Todd J. Chemical Reviews, Vol. 118, Issue 7 https://doi.org/10.1021/acs.chemrev.7b00423	journal	February 2018
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Chichibu, Shigefusa F.; Uedono, Akira; Onuma, Takeyoshi Nature Materials, Vol. 5, Issue 10 https://doi.org/10.1038/nmat1726	journal	September 2006
Prospects for LED lighting Pimputkar, Siddha; Speck, James S.; DenBaars, Steven P. Nature Photonics, Vol. 3, Issue 4 https://doi.org/10.1038/nphoton.2009.32	journal	April 2009
The emergence and prospects of deep-ultraviolet light-emitting diode technologies Kneissl, Michael; Seong, Tae-Yeon; Han, Jung Nature Photonics, Vol. 13, Issue 4 https://doi.org/10.1038/s41566-019-0359-9	journal	March 2019
Highly efficient blue InGaN nanoscale light-emitting diodes Sheen, Mihyang; Ko, Yunhyuk; Kim, Dong-uk Nature, Vol. 608, Issue 7921 https://doi.org/10.1038/s41586-022-04933-5	journal	August 2022
Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes Jeong, Hyun; Jeong, Hyeon Jun; Oh, Hye Min Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep09373	journal	March 2015
Impact of carrier diffusion on the internal quantum efficiency of InGaN quantum well structures Nomeika, Kazimieras; Podlipskas, Žydrūnas; Nikitina, Mariamija Journal of Materials Chemistry C, Vol. 10, Issue 5 https://doi.org/10.1039/D1TC04760D	journal	January 2022
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki Applied Physics Letters, Vol. 64, Issue 13, p. 1687-1689 https://doi.org/10.1063/1.111832	journal	March 1994
High dislocation densities in high efficiency GaN‐based light‐emitting diodes Lester, S. D.; Ponce, F. A.; Craford, M. G. Applied Physics Letters, Vol. 66, Issue 10 https://doi.org/10.1063/1.113252	journal	March 1995
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy Martin, G.; Botchkarev, A.; Rockett, A. Applied Physics Letters, Vol. 68, Issue 18 https://doi.org/10.1063/1.116177	journal	April 1996
Spontaneous emission of localized excitons in InGaN single and multiquantum well structures Chichibu, S.; Azuhata, T.; Sota, T. Applied Physics Letters, Vol. 69, Issue 27 https://doi.org/10.1063/1.116981	journal	December 1996
Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm Narukawa, Yukio; Kawakami, Yoichi; Funato, Mitsuru Applied Physics Letters, Vol. 70, Issue 8 https://doi.org/10.1063/1.118455	journal	February 1997
Spatially resolved cathodoluminescence spectra of InGaN quantum wells Chichibu, Shigefusa; Wada, Kazumi; Nakamura, Shuji Applied Physics Letters, Vol. 71, Issue 16 https://doi.org/10.1063/1.120025	journal	October 1997
Resonant hole localization and anomalous optical bowing in InGaN alloys Bellaiche, L.; Mattila, T.; Wang, L. -W. Applied Physics Letters, Vol. 74, Issue 13 https://doi.org/10.1063/1.123687	journal	March 1999
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques Chichibu, S. F.; Uedono, A.; Onuma, T. Applied Physics Letters, Vol. 86, Issue 2 https://doi.org/10.1063/1.1851619	journal	January 2005
Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Onuma, T.; Chakraborty, A.; Haskell, B. A. Applied Physics Letters, Vol. 86, Issue 15 https://doi.org/10.1063/1.1900947	journal	April 2005
High structural quality InN∕In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy Ohashi, Tatsuo; Holmström, Petter; Kikuchi, Akihiko Applied Physics Letters, Vol. 89, Issue 4 https://doi.org/10.1063/1.2221869	journal	July 2006
Origin of high oscillator strength in green-emitting InGaN∕GaN nanocolumns Kawakami, Y.; Suzuki, S.; Kaneta, A. Applied Physics Letters, Vol. 89, Issue 16 https://doi.org/10.1063/1.2363958	journal	October 2006
Polarization-induced valence-band alignments at cation- and anion-polar InN∕GaN heterojunctions Wu, Chung-Lin; Lee, Hong-Mao; Kuo, Cheng-Tai Applied Physics Letters, Vol. 91, Issue 4 https://doi.org/10.1063/1.2764448	journal	July 2007
Determination of InN–GaN heterostructure band offsets from internal photoemission measurements Mahmood, Zahid Hasan; Shah, A. P.; Kadir, Abdul Applied Physics Letters, Vol. 91, Issue 15 https://doi.org/10.1063/1.2794788	journal	October 2007
Defect related issues in the “current roll-off” in InGaN based light emitting diodes Monemar, B.; Sernelius, B. E. Applied Physics Letters, Vol. 91, Issue 18 https://doi.org/10.1063/1.2801704	journal	October 2007
Conduction band offset at the InN∕GaN heterojunction Wang, Kejia (Albert); Lian, Chuanxin; Su, Ning Applied Physics Letters, Vol. 91, Issue 23 https://doi.org/10.1063/1.2821378	journal	December 2007
Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes Schubert, Martin F.; Chhajed, Sameer; Kim, Jong Kyu Applied Physics Letters, Vol. 91, Issue 23 https://doi.org/10.1063/1.2822442	journal	December 2007
The role of dislocations as nonradiative recombination centers in InGaN quantum wells Abell, Josh; Moustakas, T. D. Applied Physics Letters, Vol. 92, Issue 9 https://doi.org/10.1063/1.2889444	journal	March 2008
Cross-sectional scanning photoelectron microscopy and spectroscopy of wurtzite InN∕GaN heterojunction: Measurement of “intrinsic” band lineup Wu, Chung-Lin; Lee, Hong-Mao; Kuo, Cheng-Tai Applied Physics Letters, Vol. 92, Issue 16 https://doi.org/10.1063/1.2913204	journal	April 2008
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes Hader, J.; Moloney, J. V.; Koch, S. W. Applied Physics Letters, Vol. 96, Issue 22 https://doi.org/10.1063/1.3446889	journal	May 2010
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN Moses, Poul Georg; Miao, Maosheng; Yan, Qimin The Journal of Chemical Physics, Vol. 134, Issue 8 https://doi.org/10.1063/1.3548872	journal	February 2011
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes Kioupakis, Emmanouil; Rinke, Patrick; Delaney, Kris T. Applied Physics Letters, Vol. 98, Issue 16 https://doi.org/10.1063/1.3570656	journal	April 2011
Temperature-dependence of the internal efficiency droop in GaN-based diodes Hader, J.; Moloney, J. V.; Koch, S. W. Applied Physics Letters, Vol. 99, Issue 18 https://doi.org/10.1063/1.3658031	journal	October 2011
Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN Wright, A. F. Journal of Applied Physics, Vol. 82, Issue 6 https://doi.org/10.1063/1.366114	journal	September 1997
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures Hammersley, S.; Watson-Parris, D.; Dawson, P. Journal of Applied Physics, Vol. 111, Issue 8 https://doi.org/10.1063/1.3703062	journal	April 2012
Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes Armstrong, A.; Henry, T. A.; Koleske, D. D. Applied Physics Letters, Vol. 101, Issue 16 https://doi.org/10.1063/1.4759003	journal	October 2012
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes Kioupakis, Emmanouil; Yan, Qimin; Van de Walle, Chris G. Applied Physics Letters, Vol. 101, Issue 23 https://doi.org/10.1063/1.4769374	journal	December 2012
Effects of strain on the electron effective mass in GaN and AlN Dreyer, C. E.; Janotti, A.; Van de Walle, C. G. Applied Physics Letters, Vol. 102, Issue 14 https://doi.org/10.1063/1.4801520	journal	April 2013
Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold Baloch, Kamal H.; Johnston-Peck, Aaron C.; Kisslinger, Kim Applied Physics Letters, Vol. 102, Issue 19 https://doi.org/10.1063/1.4807122	journal	May 2013
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S. Journal of Applied Physics, Vol. 116, Issue 11 https://doi.org/10.1063/1.4896103	journal	September 2014
Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes Quan, Zhijue; Wang, Li; Zheng, Changda Journal of Applied Physics, Vol. 116, Issue 18 https://doi.org/10.1063/1.4901828	journal	November 2014
Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers Armstrong, Andrew M.; Bryant, Benjamin N.; Crawford, Mary H. Journal of Applied Physics, Vol. 117, Issue 13 https://doi.org/10.1063/1.4916727	journal	April 2015
Carrier localization in the vicinity of dislocations in InGaN Massabuau, F. C-P.; Chen, P.; Horton, M. K. Journal of Applied Physics, Vol. 121, Issue 1 https://doi.org/10.1063/1.4973278	journal	January 2017
Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations Jones, Christina M.; Teng, Chu-Hsiang; Yan, Qimin Applied Physics Letters, Vol. 111, Issue 11 https://doi.org/10.1063/1.5002104	journal	September 2017
Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells David, Aurelien; Hurni, Christophe A.; Young, Nathan G. Applied Physics Letters, Vol. 111, Issue 23 https://doi.org/10.1063/1.5003112	journal	December 2017
Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency Haller, C.; Carlin, J. -F.; Jacopin, G. Applied Physics Letters, Vol. 111, Issue 26 https://doi.org/10.1063/1.5007616	journal	December 2017
GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells Haller, C.; Carlin, J. -F.; Jacopin, G. Applied Physics Letters, Vol. 113, Issue 11 https://doi.org/10.1063/1.5048010	journal	September 2018
Compensation between radiative and Auger recombinations in III-nitrides: The scaling law of separated-wavefunction recombinations David, Aurelien; Young, Nathan G.; Lund, Cory Applied Physics Letters, Vol. 115, Issue 19 https://doi.org/10.1063/1.5123743	journal	November 2019
Tuning carrier localization in In-rich InGaN alloys: Correlations between growth kinetics and optical properties Kazazis, Stylianos A.; Papadomanolaki, Elena; Iliopoulos, Eleftherios Journal of Applied Physics, Vol. 127, Issue 22 https://doi.org/10.1063/1.5128448	journal	June 2020
Atomistic analysis of radiative recombination rate, Stokes shift, and density of states in c -plane InGaN/GaN quantum wells McMahon, Joshua M.; Tanner, Daniel S. P.; Kioupakis, Emmanouil Applied Physics Letters, Vol. 116, Issue 18 https://doi.org/10.1063/5.0006128	journal	May 2020
Multiscale simulations of the electronic structure of III-nitride quantum wells with varied indium content: Connecting atomistic and continuum-based models Chaudhuri, D.; O’Donovan, M.; Streckenbach, T. Journal of Applied Physics, Vol. 129, Issue 7 https://doi.org/10.1063/5.0031514	journal	February 2021
A first-principles understanding of point defects and impurities in GaN Lyons, John L.; Wickramaratne, Darshana; Van de Walle, Chris G. Journal of Applied Physics, Vol. 129, Issue 11 https://doi.org/10.1063/5.0041506	journal	March 2021
From atomistic tight-binding theory to macroscale drift–diffusion: Multiscale modeling and numerical simulation of uni-polar charge transport in (In,Ga)N devices with random fluctuations O’Donovan, Michael; Chaudhuri, Debapriya; Streckenbach, Timo Journal of Applied Physics, Vol. 130, Issue 6 https://doi.org/10.1063/5.0059014	journal	August 2021
Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes Pant, Nick; Li, Xuefeng; DeJong, Elizabeth AIP Advances, Vol. 12, Issue 12 https://doi.org/10.1063/5.0134995	journal	December 2022
Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence Li, Xuefeng; Pant, Nick; DeJong, Elizabeth Applied Physics Letters, Vol. 122, Issue 21 https://doi.org/10.1063/5.0151301	journal	May 2023
A renaming proposal: “The Auger–Meitner effect” Matsakis, Demetrios; Coster, Anthea; Laster, Brenda Physics Today, Vol. 72, Issue 9 https://doi.org/10.1063/PT.3.4281	journal	September 2019
Does In form In-rich clusters in InGaN quantum wells? Humphreys, C. J. Philosophical Magazine, Vol. 87, Issue 13 https://doi.org/10.1080/14786430701342172	journal	May 2007
Microstructural origins of localization in InGaN quantum wells Oliver, R. A.; Bennett, S. E.; Zhu, T. Journal of Physics D: Applied Physics, Vol. 43, Issue 35 https://doi.org/10.1088/0022-3727/43/35/354003	journal	August 2010
Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer Polyakov, A. Y.; Haller, C.; Butté, R. Journal of Physics D: Applied Physics, Vol. 53, Issue 44 https://doi.org/10.1088/1361-6463/aba6b7	journal	August 2020
Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy Piva, F.; De Santi, C.; Caria, A. Journal of Physics D: Applied Physics, Vol. 54, Issue 2 https://doi.org/10.1088/1361-6463/abb727	journal	October 2020
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer Roccato, Nicola; Piva, Francesco; De Santi, Carlo Journal of Physics D: Applied Physics, Vol. 54, Issue 50 https://doi.org/10.1088/1361-6463/ac2693	journal	September 2021
Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures Blenkhorn, W. E.; Schulz, S.; Tanner, D. S. P. Journal of Physics: Condensed Matter, Vol. 30, Issue 17 https://doi.org/10.1088/1361-648X/aab818	journal	April 2018
First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials Poncé, Samuel; Li, Wenbin; Reichardt, Sven Reports on Progress in Physics, Vol. 83, Issue 3 https://doi.org/10.1088/1361-6633/ab6a43	journal	February 2020
Quantum Processes in Semiconductors Ridley, Brian K. Oxford University Press https://doi.org/10.1093/acprof:oso/9780199677214.001.0001	book	January 2013
Absence of Diffusion in Certain Random Lattices Anderson, P. W. Physical Review, Vol. 109, Issue 5 https://doi.org/10.1103/PhysRev.109.1492	journal	March 1958
Electron-Hole Recombination in Germanium Hall, R. N. Physical Review, Vol. 87, Issue 2 https://doi.org/10.1103/PhysRev.87.387	journal	July 1952
Statistics of the Recombinations of Holes and Electrons Shockley, W.; Read, W. T. Physical Review, Vol. 87, Issue 5 https://doi.org/10.1103/PhysRev.87.835	journal	September 1952
Many-Body Effects in Strongly Disordered III-Nitride Quantum Wells: Interplay Between Carrier Localization and Coulomb Interaction David, Aurelien; Young, Nathan G.; Craven, Michael D. Physical Review Applied, Vol. 12, Issue 4 https://doi.org/10.1103/PhysRevApplied.12.044059	journal	October 2019
Polar ( In , Ga ) N / Ga N Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem Tanner, Daniel S. P.; Dawson, Philip; Kappers, Menno J. Physical Review Applied, Vol. 13, Issue 4 https://doi.org/10.1103/PhysRevApplied.13.044068	journal	April 2020
Long-Range Carrier Diffusion in (In,Ga)N Quantum Wells and Implications from Fundamentals to Devices David, Aurelien Physical Review Applied, Vol. 15, Issue 5 https://doi.org/10.1103/PhysRevApplied.15.054015	journal	May 2021
Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length Including Random Alloy Fluctuations in ( In , Ga ) N and ( Al , Ga ) N Single Quantum Wells Shen, Huan-Ting; Weisbuch, Claude; Speck, James S. Physical Review Applied, Vol. 16, Issue 2 https://doi.org/10.1103/PhysRevApplied.16.024054	journal	August 2021
Atomistic analysis of Auger recombination in c -plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative recombination McMahon, Joshua M.; Kioupakis, Emmanouil; Schulz, Stefan Physical Review B, Vol. 105, Issue 19 https://doi.org/10.1103/PhysRevB.105.195307	journal	May 2022
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN Rinke, Patrick; Winkelnkemper, M.; Qteish, A. Physical Review B, Vol. 77, Issue 7 https://doi.org/10.1103/PhysRevB.77.075202	journal	February 2008
First-principles theory of nonradiative carrier capture via multiphonon emission Alkauskas, Audrius; Yan, Qimin; Van de Walle, Chris G. Physical Review B, Vol. 90, Issue 7 https://doi.org/10.1103/PhysRevB.90.075202	journal	August 2014
Effects of strain on the band structure of group-III nitrides Yan, Qimin; Rinke, Patrick; Janotti, Anderson Physical Review B, Vol. 90, Issue 12 https://doi.org/10.1103/PhysRevB.90.125118	journal	September 2014
Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells Schulz, Stefan; Caro, Miguel A.; Coughlan, Conor Physical Review B, Vol. 91, Issue 3 https://doi.org/10.1103/PhysRevB.91.035439	journal	January 2015
First-principles calculations of indirect Auger recombination in nitride semiconductors Kioupakis, Emmanouil; Steiauf, Daniel; Rinke, Patrick Physical Review B, Vol. 92, Issue 3 https://doi.org/10.1103/PhysRevB.92.035207	journal	July 2015
Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors Alkauskas, Audrius; Dreyer, Cyrus E.; Lyons, John L. Physical Review B, Vol. 93, Issue 20 https://doi.org/10.1103/PhysRevB.93.201304	journal	May 2016
Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells Shahmohammadi, M.; Liu, W.; Rossbach, G. Physical Review B, Vol. 95, Issue 12 https://doi.org/10.1103/PhysRevB.95.125314	journal	March 2017
Localization landscape theory of disorder in semiconductors. I. Theory and modeling Filoche, Marcel; Piccardo, Marco; Wu, Yuh-Renn Physical Review B, Vol. 95, Issue 14 https://doi.org/10.1103/PhysRevB.95.144204	journal	April 2017
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes Li, Chi-Kang; Piccardo, Marco; Lu, Li-Shuo Physical Review B, Vol. 95, Issue 14 https://doi.org/10.1103/PhysRevB.95.144206	journal	April 2017
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy Hahn, W.; Lentali, J. -M.; Polovodov, P. Physical Review B, Vol. 98, Issue 4 https://doi.org/10.1103/PhysRevB.98.045305	journal	July 2018
Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities Christian, G. M.; Schulz, S.; Kappers, M. J. Physical Review B, Vol. 98, Issue 15 https://doi.org/10.1103/PhysRevB.98.155301	journal	October 2018
Efficiency Drop in Green InGaN / GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations Auf der Maur, Matthias; Pecchia, Alessandro; Penazzi, Gabriele Physical Review Letters, Vol. 116, Issue 2 https://doi.org/10.1103/PhysRevLett.116.027401	journal	January 2016
Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds Sauty, Mylène; Lopes, Nicolas M. S.; Banon, Jean-Philippe Physical Review Letters, Vol. 129, Issue 21 https://doi.org/10.1103/PhysRevLett.129.216602	journal	November 2022
Origin of Luminescence from InGaN Diodes O'Donnell, K. P.; Martin, R. W.; Middleton, P. G. Physical Review Letters, Vol. 82, Issue 1 https://doi.org/10.1103/PhysRevLett.82.237	journal	January 1999
Suppression of Nonradiative Recombination by V-Shaped Pits in GaInN / GaN Quantum Wells Produces a Large Increase in the Light Emission Efficiency Hangleiter, A.; Hitzel, F.; Netzel, C. Physical Review Letters, Vol. 95, Issue 12 https://doi.org/10.1103/PhysRevLett.95.127402	journal	September 2005
Excitons in a disordered medium: A numerical study in InGaN quantum wells David, Aurelien; Weisbuch, Claude Physical Review Research, Vol. 4, Issue 4 https://doi.org/10.1103/PhysRevResearch.4.043004	journal	October 2022
Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides Dreyer, Cyrus E.; Janotti, Anderson; Van de Walle, Chris G. Physical Review X, Vol. 6, Issue 2 https://doi.org/10.1103/PhysRevX.6.021038	journal	June 2016
nextnano: General Purpose 3-D Simulations Birner, S.; Zibold, T.; Andlauer, T. IEEE Transactions on Electron Devices, Vol. 54, Issue 9 https://doi.org/10.1109/TED.2007.902871	journal	September 2007
Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes Yang, Yi; Cao, Xian An; Yan, Chunhui IEEE Transactions on Electron Devices, Vol. 55, Issue 7 https://doi.org/10.1109/TED.2008.923561	journal	July 2008
InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates Mukai, Takashi; Takekawa, Kazunori; Nakamura, Shuji Japanese Journal of Applied Physics, Vol. 37, Issue Part 2, No. 7B https://doi.org/10.1143/JJAP.37.L839	journal	July 1998
Band Offsets of InN/GaN Interface Shih, Chuan-Feng; Chen, Nie-Chuan; Chang, Pen-Hsiu Japanese Journal of Applied Physics, Vol. 44, Issue 11R https://doi.org/10.1143/JJAP.44.7892	journal	November 2005
Review—The Physics of Recombinations in III-Nitride Emitters David, Aurelien; Young, Nathan G.; Lund, Cory ECS Journal of Solid State Science and Technology, Vol. 9, Issue 1 https://doi.org/10.1149/2.0372001JSS	journal	January 2020
Review—Defect-Tolerant Luminescent Properties of Low InN Mole Fraction In _x Ga _1- _x N Quantum Wells under the Presence of Polarization Fields Chichibu, Shigefusa F. ECS Journal of Solid State Science and Technology, Vol. 9, Issue 1 https://doi.org/10.1149/2.0382001JSS	journal	November 2019
Disorder effects in nitride semiconductors: impact on fundamental and device properties Weisbuch, Claude; Nakamura, Shuji; Wu, Yuh-Renn Nanophotonics, Vol. 10, Issue 1 https://doi.org/10.1515/nanoph-2020-0590	journal	November 2020
Effect of Carrier Localization on Recombination Processes and Efficiency of InGaN-Based LEDs Operating in the “Green Gap” Karpov, Sergey Applied Sciences, Vol. 8, Issue 5 https://doi.org/10.3390/app8050818	journal	May 2018
Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures Badcock, Tom J.; Hammersley, Simon; Watson-Parris, Duncan Japanese Journal of Applied Physics, Vol. 52, Issue 8S https://doi.org/10.7567/JJAP.52.08JK10	journal	August 2013

Similar Records

Radiative and Auger recombination processes in indium nitride

Journal Article · 2018 · Applied Physics Letters · OSTI ID:1543870

McAllister, Andrew; Bayerl, Dylan; Kioupakis, Emmanouil

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire

Journal Article · 2014 · Journal of Applied Physics · OSTI ID:1241350

Sundaram, S.; Puybaret, R.; El Gmili, Y.; +10 more

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Journal Article · 2014 · Journal of Applied Physics · OSTI ID:22308131

Sundaram, S.; El Gmili, Y.; Bonanno, P. L.; +9 more

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
Carrier generation & recombination
Density functional calculations
Disordered alloys
III-V semiconductors
LEDs
Optoelectronics
Schroedinger equation
Weak localization

Title: Increased light-emission efficiency in disordered (In, Ga)N through the correlated reduction of recombination rates

Citation Formats

References (101)

Similar Records

Related Subjects