Moiré-Assisted Strain Transfer in Vertical van der Waals Heterostructures

Hu, Jenny; Yu, Leo; Chen, Xueqi; Lee, Wanhee; Mate, C. Mathew; Heinz, Tony F.

doi:10.1021/acs.nanolett.3c03388

Title: Moiré-Assisted Strain Transfer in Vertical van der Waals Heterostructures

Journal Article · 30 October 2023 · Nano Letters

DOI: https://doi.org/10.1021/acs.nanolett.3c03388 · OSTI ID:2283816

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^[1]; Lee, Wanhee ^[2]; Mate, C. Mathew ^[3];

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Stanford Univ., CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Stanford Univ., CA (United States)
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Strain provides a powerful method to study 2D monolayers and to tune their properties. The same approach also has great potential for van-der-Waals (vdW) heterostructures. However, we need to understand how strain can be applied to vertically stacked vdW structures, for which strain transfer from one layer to the next remains little explored. In our experiment, we fabricated vertical heterostructures consisting of transition metal dichalcogenides (TMDCs) monolayers that were deposited on a flexible substrate. These TMDC heterostructures allowed us to read out separately the strain in each monolayer by photoluminescence measurements. We find that, in TMDC heterostructures with large twist angles (>5°), strain transfer is limited. However, for aligned heterostructures with small twist angles (≤5°), near unity strain transfer efficiency is observed. Here, we correlate this finding with the moiré domains formed in the aligned heterostructures by reconstruction.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 2283816

Journal Information:: Nano Letters, Vol. 23, Issue 21; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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