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Title: Dimensionality-driven metal to Mott insulator transition in two-dimensional 1T-TaSe2

Journal Article · · National Science Review
 [1];  [2];  [3];  [1];  [4];  [1];  [1];  [5];  [1];  [6];  [7];  [8];  [6];  [4];  [9];  [5];  [3];  [3]; ORCiD logo [10];  [1] more »;  [1] « less
  1. Fudan Univ., Shanghai (China). Key Lab. of Surface Physics; Shanghai Research Center for Quantum Sciences (China)
  2. Chinese Academy of Sciences (CAS), Shanghai (China). Key Lab. of Functional Materials for Informatics; ShanghaiTech Univ. (China)
  3. Korea Inst. for Advanced Study (KIAS), Seoul (Korea, Republic of)
  4. Univ. of Science and Technology of China, Hefei (China)
  5. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  6. ShanghaiTech Univ. (China). ShanghaiTech Laboratory for Topological Physics (China)
  7. Chinese Academy of Sciences (CAS), Hefei (China). Hefei Institutes of Physical Sciences. Key Lab. of Materials Physics
  8. Chinese Academy of Sciences (CAS), Hefei (China). Hefei Institutes of Physical Sciences. Key Lab. of Materials Physics; Nanjing Univ. (China)
  9. Univ. of Science and Technology of China, Hefei (China); Chinese Academy of Sciences (CAS), Hefei (China). Key Lab. of Strongly Coupled Quantum Matter Physics
  10. Chinese Academy of Sciences (CAS), Shanghai (China). Key Lab. of Functional Materials for Informatics; Univ. of Science and Technology of China, Hefei (China). National Synchrotron Radiation Lab.
+ Show Author Affiliations

Two-dimensional materials represent a major frontier for research into exotic many-body quantum phenomena. In the extreme two-dimensional limit, electron-electron interaction often dominates over other electronic energy scales, leading to strongly correlated effects such as quantum spin liquid and unconventional superconductivity. The dominance is conventionally attributed to the lack of electron screening in the third dimension. Here, we discover an intriguing metal to Mott insulator transition in 1T-TaSe2 that defies conventional wisdom. Specifically, we find that dimensionality crossover, instead of reduced screening, drives the transition in atomically thin 1T-TaSe2. A dispersive band crossing the Fermi level is found to be responsible for the bulk metallicity in the material. Reducing the dimensionality, however, effectively quenches the kinetic energy of these initially itinerant electrons, and drives the material into a Mott insulating state. The dimensionality-driven metal to Mott insulator transition resolves the long-standing dichotomy between metallic bulk and insulating surface of 1T-TaSe2. Our work further reveals a new pathway for modulating two-dimensional materials that enables exploring strongly correlated systems across uncharted parameter space.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
U.S. Department of Energy; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
2282117
Alternate ID(s):
OSTI ID: 2315612; OSTI ID: 2248096; OSTI ID: 2283585
Journal Information:
National Science Review, Journal Name: National Science Review Vol. 11; ISSN 2095-5138
Publisher:
China Science PublishingCopyright Statement
Country of Publication:
United States
Language:
English

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36 MATERIALS SCIENCE
two-dimensional materials
1T-TaSe2
dimensionality crossover
metal to Mott insulator transition