Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

Schulte, Kevin L.; Friedman, Daniel J.; Dada, Titilope; Guthrey, Harvey L.; Costa, Edgard W.; Tervo, Eric J.; France, Ryan M.; Geisz, John F.; Steiner, Myles A.

doi:10.1002/aenm.202303367

Title: Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

Journal Article · 18 January 2024 · Advanced Energy Materials

DOI: https://doi.org/10.1002/aenm.202303367 · OSTI ID:2281958

^[1]; Friedman, Daniel J. ^[1]; Dada, Titilope ^[2]; Guthrey, Harvey L. ^[1]; Costa, Edgard W. ^[1]; Tervo, Eric J. ^[2]; France, Ryan M. ^[1]; Geisz, John F. ^[1]; Steiner, Myles A. ^[1]

National Renewable Energy Laboratory Golden CO 80401 USA
Department of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USA

Abstract Inverted metamorphic Ga _0.3 In _0.7 As photovoltaic converters with sub‐0.60 eV bandgaps grown on InP and GaAs are presented. Threading dislocation densities are 1.3 ± 0.6 × 10 ⁶ and 8.9 ± 1.7 × 10 ⁶ cm ⁻² on InP and GaAs, respectively. The devices generate open‐circuit voltages of 0.386 and 0.383 V, respectively, under irradiance producing a short‐circuit current density of ≈10 A cm ⁻² , yielding bandgap‐voltage offsets of 0.20 and 0.21 V. Power and broadband reflectance measurements are used to estimate thermophotovoltaic (TPV) efficiency. The InP‐based cell is estimated to yield 1.09 W cm ⁻² at 1100 °C versus 0.92 W cm ⁻² for the GaAs‐based cell, with efficiencies of 16.8 versus 9.2%. The efficiencies of both devices are limited by sub‐bandgap absorption, with power weighted sub‐bandgap reflectances of 81% and 58%, respectively, the majority of which is assumed to occur in the graded buffers. The 1100 °C TPV efficiencies are estimated to increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application to laser power conversion in the 2.0–2.3 µm atmospheric window. Peak laser power converter efficiencies of 36.8% and 32.5% are estimated under 2.0 µm irradiances of 1.86 and 2.81 W cm ⁻² , respectively.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 2281958

Report Number(s):: NREL/JA-5900-87628; 2303367

Journal Information:: Advanced Energy Materials, Journal Name: Advanced Energy Materials Journal Issue: 10 Vol. 14; ISSN 1614-6832

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Title: Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

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