Local Environment of Sc and Y Dopant Ions in Aluminum Nitride Thin Films

Cohen, Asaf; Li, Junying; Cohen, Hagai; Kaplan-Ashiri, Ifat; Khodorov, Sergey; Wachtel, Ellen J.; Lubomirsky, Igor; Frenkel, Anatoly I.; Ehre, David

doi:10.1021/acsaelm.3c01390

Title: Local Environment of Sc and Y Dopant Ions in Aluminum Nitride Thin Films

Journal Article · 19 January 2024 · ACS Applied Electronic Materials

DOI: https://doi.org/10.1021/acsaelm.3c01390 · OSTI ID:2281952

Cohen, Asaf ^[1]; Li, Junying ^[2];

^[3]; Kaplan-Ashiri, Ifat ^[3]; Khodorov, Sergey ^[1]; Wachtel, Ellen J. ^[1];

^[1];

^[2];

^[1]

Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot 7610001, Israel
Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook, New York 11794, United States
Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Weizmann Institute of Science, Rehovot (Israel)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: SC0012704; SC0019068

OSTI ID:: 2281952

Journal Information:: ACS Applied Electronic Materials, Journal Name: ACS Applied Electronic Materials Journal Issue: 2 Vol. 6; ISSN 2637-6113

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
aluminum scandium nitride
aluminum yttrium nitride
piezoelectric
seeding layer
sputtering
texture

Title: Local Environment of Sc and Y Dopant Ions in Aluminum Nitride Thin Films

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