New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

Tyagi, Pawan

doi:10.1088/2053-1591/accf01

Title: New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

Journal Article · 28 April 2023 · Materials Research Express (Online)

DOI: https://doi.org/10.1088/2053-1591/accf01 · OSTI ID:2281180

^[1]

University of the District of Columbia, Washington, DC (United States); Indian Institute of Technology Kanpur (India)

GaAs is well known for its extremely high electron mobility and direct band gap. Owing to the technological advances in silicon-based technology, GaAs has been limited to niche areas. This paper discusses the application of GaAs in molecular electronics and spintronics as a potential field for considering this amazing but challenging material. GaAs is challenging because its surface is characterized by a high density of surface states, which precludes the utilization of this semiconducting material in mainstream devices. Sulfur(S)-based passivation has been found to be significantly useful for reducing the effect of dangling bonds and was researched thoroughly. GaAs applications in molecular spintronics and electronics can benefit significantly from prior knowledge of GaAs and S interactions because S is a popular functional group for bonding molecular device elements with different semiconductors and metals. In this article, the problem associated with the GaAs surface is discussed in a tutorial form. A wide variety of surface passivation methods has been briefly introduced. We attempted to highlight the significant differences in the S-GaAs interactions for different S passivation methods. We also elaborate on the mechanisms and atomic-scale understanding of the variation in surface chemistry and reconstruction due to various S passivation methods. It is envisioned that GaAs and thiol-terminated molecule-based novel devices can exhibit innovative device characteristics and bring the added advantage of S-based passivation.

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Research Organization:: University of the District of Columbia, Washington, DC (United States)

Sponsoring Organization:: USDOE; National Science Foundation-CREST

Grant/Contract Number:: NA0003945; HRD- 1914751

OSTI ID:: 2281180

Journal Information:: Materials Research Express (Online), Vol. 10, Issue 4; ISSN 2053-1591

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
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Title: New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

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