Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2

Xu, Bohan; Lomenzo, Patrick D.; Kersch, Alfred; Schenk, Tony; Richter, Claudia; Fancher, Chris M.; Starschich, Sergej; Berg, Fenja; Reinig, Peter; Holsgrove, Kristina M.; Kiguchi, Takanori; Mikolajick, Thomas; Boettger, Ulrich; Schroeder, Uwe

doi:10.1002/adfm.202311825

Title: Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂

Journal Article · 09 November 2023 · Advanced Functional Materials

DOI: https://doi.org/10.1002/adfm.202311825 · OSTI ID:2281119

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^[3]; Richter, Claudia ^[1];

^[4]; Starschich, Sergej ^[5];

^[5]; Reinig, Peter ^[6];

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NaMLab gGmbH, Dresden (Germany)
Munich University of Applied Sciences, Munich (Germany)
NaMLab gGmbH, Dresden (Germany); Ferroelectric Memory Company, Dresden (Germany)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
RWTH Aachen Univ. (Germany)
Fraunhofer Institut für Photonische Mikrosysteme IPMS, Dresden (Germany)
Queen's Univ., Belfast, Northern Ireland (United Kingdom)
Tohoku Univ., Sendai (Japan); Kumamoto University (Japan)
NaMLab gGmbH, Dresden (Germany); Technische Universität Dresden (Germany)

Since the discovery of ferroelectricity in doped HfO₂ and ZrO₂ thin films over a decade ago, fluorite-structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal-oxide semiconductor compatibility compared to conventional perovskite ferroelectric materials. Although various factors influencing the formation of the ferroelectric properties are identified, a clear understanding of the causes of the phase formation have been difficult to determine. In this work, ZrO₂ films deposited by atomic layer deposition and chemical solution deposition have resulted in films with completely different structural properties. Regardless of these differences, a general relationship between strain and phase formation is established, leading to a more unified understanding of ferroelectric phase formation in undoped ZrO₂ films, which can be applied to other fluorite-structured films.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 2281119

Journal Information:: Advanced Functional Materials, Journal Name: Advanced Functional Materials Journal Issue: 1 Vol. 1; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
ferroelectricity
strain
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zirconia

Title: Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2

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Title: Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO₂