Nonvolatile Memristive Effect in Few-Layer CrI3 Driven by Electrostatic Gating

Fu, ZhuangEn; Samarawickrama, Piumi I.; Zhu, Yanglin; Mao, Zhiqiang; Wang, Wenyong; Watanabe, Kenji; Taniguchi, Takashi; Tang, Jinke; Ackerman, John; Tian, Jifa

doi:10.1021/acs.nanolett.3c03926

Title: Nonvolatile Memristive Effect in Few-Layer CrI₃ Driven by Electrostatic Gating

Journal Article · 10 December 2023 · Nano Letters

DOI: https://doi.org/10.1021/acs.nanolett.3c03926 · OSTI ID:2278934

Fu, ZhuangEn ^[1]; Samarawickrama, Piumi I. ^[2]; Zhu, Yanglin ^[3];

^[3]; Wang, Wenyong ^[2];

^[4];

^[4]; Tang, Jinke ^[2]; Ackerman, John ^[2];

^[2]

University of Wyoming, Laramie, WY (United States); University of Wyoming
University of Wyoming, Laramie, WY (United States)
Pennsylvania State University, University Park, PA (United States)
National Institute for Materials Science, Tsukuba (Japan)

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI₃-based tunnel junctions. The few-layer CrI₃-based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI₃ tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI₃. We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI₃ via gating-induced Jahn–Teller distortion. Furthermore, our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

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Research Organization:: University of Wyoming, Laramie, WY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); U.S. National Science Foundation (NSF); JSPS KAKENHI

Grant/Contract Number:: SC0020074; SC0021281; SC0024188

OSTI ID:: 2278934

Alternate ID(s):: OSTI ID: 2335860; OSTI ID: 2335861; OSTI ID: 2341716

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 24 Vol. 23; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
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chromium triiodide
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Title: Nonvolatile Memristive Effect in Few-Layer CrI3 Driven by Electrostatic Gating

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Title: Nonvolatile Memristive Effect in Few-Layer CrI₃ Driven by Electrostatic Gating