High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD

Herath Mudiyanselage, Dinusha; Wang, Dawei; Da, Bingcheng; He, Ziyi; Fu, Houqiang

doi:10.35848/1882-0786/ad15f4

Title: High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD

Journal Article · 02 January 2024 · Applied Physics Express

DOI: https://doi.org/10.35848/1882-0786/ad15f4 · OSTI ID:2275001

; Wang, Dawei; Da, Bingcheng; He, Ziyi;

Abstract This letter reports the demonstration of Aluminum nitride (AIN) Schottky barrier diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios of 10 ⁶ –10 ⁸ and excellent thermal stability from 298 to 623 K. The device Schottky barrier height increased from 0.89 to 1.85 eV, and the ideality factor decreased from 4.29 to 1.95 with increasing temperature, ascribed to the inhomogeneous metal/AlN interface. This work demonstrates the potential of AlN as an ultra-wide bandgap semiconductor for developing multi-kV AlN high-voltage and high-power devices.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: SC0021230

OSTI ID:: 2275001

Journal Information:: Applied Physics Express, Journal Name: Applied Physics Express Journal Issue: 1 Vol. 17; ISSN 1882-0778

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: Japan

Language:: English

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