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Title: Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $$\delta$$-layer tunnel junctions

Journal Article · · Scientific Reports
 [1];  [1]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

The precise positioning of dopants in semiconductors using scanning tunneling microscopes has led to the development of planar dopant-based devices, also known as δ layer-based devices, facilitating the exploration of new concepts in classical and quantum computing. Recently, it has been shown that two distinct conductivity regimes (low- and high-bias regimes) exist in δ-layer tunnel junctions due to the presence of quasi-discrete and continuous states in the conduction band of δ-layer systems. Furthermore, discrete charged impurities in the tunnel junction region significantly influence the tunneling rates in δ-layer tunnel junctions. Here we demonstrate that electrical dipoles, i.e. zero-charge defects, present in the tunnel junction region can also significantly alter the tunneling rate, depending, however, on the specific conductivity regime, and orientation and moment of the dipole. In the low-bias regime, with high-resistance tunneling mode, dipoles of nearly all orientations and moments can alter the current, indicating the extreme sensitivity of the tunneling current to the slightest imperfection in the tunnel gap. In the high-bias regime, with low-resistivity, only dipoles with high moments and oriented in the directions perpendicular to the electron tunneling direction can significantly affect the current, thus making this conductivity regime significantly less prone to the influence of dipole defects with low-moments or oriented in the direction parallel to the tunneling.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
NA0003525
OSTI ID:
2246700
Alternate ID(s):
OSTI ID: 2320344
Report Number(s):
SAND-2024-02761J
Journal Information:
Scientific Reports, Vol. 13, Issue 1; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

References (41)

The sub-band structure of atomically sharp dopant profiles in silicon journal June 2020
Quantum Reflection and Dwell Times of Metastable States journal November 2007
Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H–Si Using STM and DFT journal November 2022
A two-qubit gate between phosphorus donor electrons in silicon journal July 2019
Charge Sensing of Precisely Positioned P Donors in Si journal October 2011
The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers journal June 2015
Observation and origin of the Δ manifold in Si:P δ layers journal March 2020
Thermal dissociation and desorption of P H 3 on Si(001): A reinterpretation of spectroscopic data journal November 2006
Reaction paths of phosphine dissociation on silicon (001) journal January 2016
Conductivity and size quantization effects in semiconductor $$\delta$$-layer systems journal September 2022
Quantum Transport Simulation of Experimentally Fabricated Nano-FinFET journal April 2007
Disentangling phonon and impurity interactions in δ-doped Si(001) journal April 2014
A single-atom transistor journal February 2012
Experimental determination of tunneling characteristics and dwell times from temperature dependence of Al/Al2O3/Al junctions journal December 2015
Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon journal May 2022
Monolithic Three-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction journal November 2021
Influence of imperfections on tunneling rate in δ -layer junctions journal November 2023
Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture journal January 2013
Single-charge detection by an atomic precision tunnel junction journal March 2014
Engineering topological states in atom-based semiconductor quantum dots journal June 2022
Quantum Transport in Si:P δ-Layer Wires conference September 2020
Quantum Transport Simulations for Si:P δ-layer Tunnel Junctions conference September 2021
Contact block reduction method for ballistic transport and carrier densities of open nanostructures journal June 2005
Lifetime Matrix in Collision Theory journal April 1960
Bipolar device fabrication using a scanning tunnelling microscope journal July 2020
Coherent control of a donor-molecule electron spin qubit in silicon journal June 2021
B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl 3 on Si(100) journal August 2021
Investigating the regrowth surface of Si:P δ-layers toward vertically stacked three dimensional devices journal December 2009
Influence of doping density on electronic transport in degenerate Si:P δ -doped layers journal January 2006
Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots journal November 2022
Impact of Incorporation Kinetics on Device Fabrication with Atomic Precision journal November 2021
Multi‐Scale Modeling of Tunneling in Nanoscale Atomically Precise Si:P Tunnel Junctions journal March 2023
Ohm’s Law Survives to the Atomic Scale journal January 2012
Revealing quantum effects in highly conductive δ-layer systems journal September 2021
Contact block reduction method and its application to a 10 nm MOSFET device journal March 2004
Efficient self-consistent quantum transport simulator for quantum devices journal April 2014
Efficient method for the calculation of ballistic quantum transport journal April 2003
Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon journal December 2012
Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon journal August 2020
Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices journal August 2019
Bipolar device fabrication using a scanning tunnelling microscope dataset January 2020