Deposition and dielectric characterization of highly oriented V2O5 thin films

Jacques, Leonard; Shetty, Smitha; Vega, Fernando Josue; Liu, Yongtao; Aronson, Benjamin; Beechem, Thomas; Trolier-McKinstry, Susan

doi:10.1557/s43579-023-00502-7

Title: Deposition and dielectric characterization of highly oriented V₂O₅ thin films

Journal Article · 27 November 2023 · MRS communications

DOI: https://doi.org/10.1557/s43579-023-00502-7 · OSTI ID:2229643

^[1];

^[2]; Vega, Fernando Josue ^[3];

^[4]; Aronson, Benjamin ^[2];

^[3];

^[2]

Pennsylvania State University, University Park, PA (United States); Penn State
Pennsylvania State University, University Park, PA (United States)
Purdue University, West Lafayette, LA (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

The possibility of ferroelectricity in orthorhombic V₂O₅ thin flms was investigated. Films were deposited via either a chemical solution deposition (CSD) route or by RF magnetron sputtering. Highly (001) oriented V₂O₅ flms were achieved with both deposition routes at temperatures as low as 300°C. No evidence for ferroelectricity was observed, even in flms which had been doped to provide local nuclei for polarization reversal. Loss originated from mid-gap trap states stemming from oxygen vacancies that were observed with photoluminescence, supplemented by piezoresponse force microscopy measurements. Furthermore, these trap states may have helped mimic ferroelectricity in previous reports on V₂O₅.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Pennsylvania State University, University Park, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021118

OSTI ID:: 2229643

Journal Information:: MRS communications, Journal Name: MRS communications Vol. 14; ISSN 2159-6867

Publisher:: Springer NatureCopyright Statement

Country of Publication:: United States

Language:: English

References (20)

Kinetics of oxidation of vanadyl acetylacetonate by oxygen in methanolic solution Grybo, Ryszard; Samotus, Alina; Popova, Natasha Transition Metal Chemistry https://doi.org/10.1023/A:1018426004961	journal	January 1997
The structure and certain dielectric properties of ferroelectric films obtained by the method of annealing pastes or powders Surowiak, Zygmunt Ferroelectrics, Vol. 23, Issue 1 https://doi.org/10.1080/00150198008224803	journal	January 1980
The future of ferroelectric field-effect transistor technology Khan, Asif Islam; Keshavarzi, Ali; Datta, Suman Nature Electronics, Vol. 3, Issue 10 https://doi.org/10.1038/s41928-020-00492-7	journal	October 2020
Growth, thermal, dielectric and mechanical studies of triglycine zinc chloride, a semiorganic nonlinear optical material Peter, M. Esthaku; Ramasamy, P. Materials Letters, Vol. 64, Issue 1 https://doi.org/10.1016/j.matlet.2009.08.048	journal	January 2010
XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering Wang, X. J.; Li, H. D.; Fei, Y. J. Applied Surface Science, Vol. 177, Issue 1-2 https://doi.org/10.1016/S0169-4332(00)00918-1	journal	June 2001
Silver-Doped Vanadium Oxides as Host Materials for Lithium Intercalation Coustier, F.; Passerini, S.; Hill, J. MRS Proceedings, Vol. 496 https://doi.org/10.1557/PROC-496-353	journal	January 1997
Electrical conductivity and dielectric studies of MnO 2 doped V 2 O 5 Tan, Foo Khoon; Hassan, Jumiah; Wahab, Zaidan Abd. Results in Physics, Vol. 6 https://doi.org/10.1016/j.rinp.2016.07.011	journal	January 2016
Effect of total gas and oxygen partial pressure during deposition on the properties of sputtered V2O5 thin films Gies, A.; Pecquenard, B.; Benayad, A. Solid State Ionics, Vol. 176, Issue 17-18 https://doi.org/10.1016/j.ssi.2005.02.012	journal	May 2005
Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature Giannetta, H. M. R.; Calaza, C.; Lamas, D. G. Thin Solid Films, Vol. 589 https://doi.org/10.1016/j.tsf.2015.06.048	journal	August 2015
A review of the growth of V2O5 films from 1885 to 2010 Beke, Szabolcs Thin Solid Films, Vol. 519, Issue 6 https://doi.org/10.1016/j.tsf.2010.11.001	journal	January 2011
Tungsten doping effect on V2O5 thin film electrochromic performance Panagopoulou, Marianthi; Vernardou, Dimitra; Koudoumas, Emmanuel Electrochimica Acta, Vol. 321 https://doi.org/10.1016/j.electacta.2019.134743	journal	October 2019
Doped Vanadium Oxides as Host Materials for Lithium Intercalation Coustier, Fabrice Journal of The Electrochemical Society, Vol. 146, Issue 4 https://doi.org/10.1149/1.1391770	journal	January 1999
Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix Lopez, R.; Boatner, L. A.; Haynes, T. E. Journal of Applied Physics, Vol. 92, Issue 7 https://doi.org/10.1063/1.1503391	journal	October 2002
An ab initio Study of Reduction of V ₂ O ₅ through the Formation of Oxygen Vacancies and Li Intercalation Scanlon, David O.; Walsh, Aron; Morgan, Benjamin J. The Journal of Physical Chemistry C, Vol. 112, Issue 26 https://doi.org/10.1021/jp711334f	journal	June 2008
Effects of the precursor concentration and different annealing ambients on the structural, optical, and electrical properties of nanostructured V2O5 thin films deposited by spray pyrolysis technique Irani, Rowshanak; Rozati, Seyed Mohammad; Beke, Szabolcs Applied Physics A, Vol. 124, Issue 4 https://doi.org/10.1007/s00339-018-1744-9	journal	March 2018
Effects of Pumice-Based Porous Material on Hydration Characteristics and Persistent Shrinkage of Ultra-High Performance Concrete (UHPC) Liu, Kaizhi; Yu, Rui; Shui, Zhonghe Materials, Vol. 12, Issue 1 https://doi.org/10.3390/ma12010011	journal	December 2018
Pathway and Surface Mechanism Studies of 1,3-butadiene Selective Oxidation Over Vanadium-Molybdenum-Oxygen Catalysts Schroeder, William David https://doi.org/10.2172/803827	report	January 2001
Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale Vasudevan, Rama K.; Balke, Nina; Maksymovych, Peter Applied Physics Reviews, Vol. 4, Issue 2 https://doi.org/10.1063/1.4979015	journal	June 2017
AlScN: A III-V semiconductor based ferroelectric Fichtner, Simon; Wolff, Niklas; Lofink, Fabian Journal of Applied Physics, Vol. 125, Issue 11 https://doi.org/10.1063/1.5084945	journal	March 2019
Structural and mechanical properties of dc and pulsed dc reactive magnetron sputtered V₂O₅films Fateh, N.; Fontalvo, G. A.; Mitterer, C. Journal of Physics D: Applied Physics, Vol. 40, Issue 24 https://doi.org/10.1088/0022-3727/40/24/019	journal	November 2007

Similar Records

Orientation-dependent piezoelectric properties in lead-free epitaxial 0.5BaZr{sub 0.2}Ti{sub 0.8}O{sub 3}-0.5Ba{sub 0.7}Ca{sub 0.3}TiO{sub 3} thin films

Journal Article · 2013 · Applied Physics Letters · OSTI ID:22217960

Luo, B. C.; Wang, D. Y.; Li, S.; +1 more

Structural and ferroelectric properties of the {ital c}-axis oriented SrBi{sub 2}Ta{sub 2}O{sub 9} thin films deposited by the radio-frequency magnetron sputtering

Journal Article · 1996 · Applied Physics Letters · OSTI ID:399759

Song, T K; Lee, J; Jung, H J

Highly oriented polycrystalline Cu{sub 2}O film formation using RF magnetron sputtering deposition for solar cells

Journal Article · 2014 · AIP Conference Proceedings · OSTI ID:22266055

Noda, S.; Shima, H.; Akinaga, H.

Related Subjects

36
thin film
sputtering
sol-gel
defects
dielectric properties
spectroscopy

Title: Deposition and dielectric characterization of highly oriented V2O5 thin films

Citation Formats

References (20)

Similar Records

Related Subjects

Title: Deposition and dielectric characterization of highly oriented V₂O₅ thin films