Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation

Tsai, Tsung-Yin; Qwah, Kai Shek; Banon, Jean-Philippe; Filoche, Marcel; Weisbuch, Claude; Wu, Yuh-Renn; Speck, James S.

doi:10.1103/PhysRevApplied.20.044069

Title: Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation

Journal Article · 25 October 2023 · Physical Review Applied

DOI: https://doi.org/10.1103/PhysRevApplied.20.044069 · OSTI ID:2228765

Tsai, Tsung-Yin;

;

; Speck, James S.

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Sponsoring Organization:: USDOE

OSTI ID:: 2228765

Journal Information:: Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 4 Vol. 20; ISSN 2331-7019; ISSN PRAHB2

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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