Thermal Stability of Schottky Contacts and Rearrangement of Defects in β ‐Ga 2 O 3 Crystals

Seyidov, Palvan; Varley, Joel B.; Frodason, Ymir Kalmann; Klimm, Detlef; Vines, Lasse; Galazka, Zbigniew; Chou, Ta‐Shun; Popp, Andreas; Irmscher, Klaus; Fiedler, Andreas

doi:10.1002/aelm.202300428

Title: Thermal Stability of Schottky Contacts and Rearrangement of Defects in β ‐Ga ₂ O ₃ Crystals

Journal Article · 29 November 2023 · Advanced Electronic Materials

DOI: https://doi.org/10.1002/aelm.202300428 · OSTI ID:2228373

Seyidov, Palvan ^[1]; Varley, Joel B. ^[2]; Frodason, Ymir Kalmann ^[3]; Klimm, Detlef ^[1]; Vines, Lasse ^[3]; Galazka, Zbigniew ^[1]; Chou, Ta‐Shun ^[1]; Popp, Andreas ^[1]; Irmscher, Klaus ^[1]; Fiedler, Andreas ^[1]

Leibniz‐Institut für Kristallzüchtung 12489 Berlin Germany
Lawrence Livermore National Laboratory Livermore CA 94550 USA
Department of Physics/Centre for Materials Science and Nanotechnology University of Oslo Oslo N‐0316 Norway

Abstract The thermal stability of different Schottky contacts (Au, Pt, and Ni) on (100) β ‐Ga ₂ O ₃ single crystals grown by the Czochralski method is investigated. Besides the examination of the Schottky barrier parameters, contact‐dependent defect levels are investigated by deep‐level transient spectroscopy (DLTS) in a 100–650 K (ramp‐up) and 650–100 K (ramp‐down) temperature cycle. Several defect levels are detected below the conduction band minimum at 0.41, 0.60, 0.77, 0.96, and 1.17 eV. In the temperature ramp‐down DLTS, the 1.17 eV level disappears, and the 0.60 eV level appears for all Schottky contacts. DFT calculations suggest that rearrangement and dissociation of a single hydrogen from a doubly‐hydrogenated Ga─O divacancy complex occurs during the temperature sweep under bias. The trap level at 0.96 eV only appears after the thermal load for the Ni contact, in contrast to Au and Pt, where it is present without a thermal budget. Temperature‐dependent leakage current (at −4 V) measurements indicate oxidation of Ni, and further thermodynamic analysis suggests alloying of Au‐Ga atoms at the Au/ β ‐Ga ₂ O ₃ interface. These studies provide insight into the behavior induced by these common Schottky contacts and the alteration associated with temperature cycling.

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Sponsoring Organization:: USDOE

OSTI ID:: 2228373

Alternate ID(s):: OSTI ID: 2349591; OSTI ID: 2228374

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 1 Vol. 11; ISSN 2199-160X

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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