Monolithically Integrated $\varepsilon$-Ge/InxGa1-xAs Quantum Well Laser Design: Experimental and Theoretical Investigation

Joshi, Rutwik; Johnston, S.; Karthikeyan, S.; Lester, L. F.; Hudait, Mantu K.

doi:10.1109/jstqe.2023.3323336

Title: Monolithically Integrated $$\varepsilon$$-Ge/In_xGa_1-xAs Quantum Well Laser Design: Experimental and Theoretical Investigation

Journal Article · 09 October 2023 · IEEE Journal of Selected Topics in Quantum Electronics

DOI: https://doi.org/10.1109/jstqe.2023.3323336 · OSTI ID:2222427

^[1];

^[2]; Karthikeyan, S. ^[1]; Lester, L. F. ^[1]; Hudait, Mantu K. ^[1]

Virginia Polytechnic Institute and State University, Blacksburg, VA (United States)
National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Here, we have analyzed the electrical and optical phenomenon occurring in a $$\varepsilon$$-Ge/In _x Ga _1-x -Ge/In _x Ga _1-x As quantum well (QW) laser through self-consistent physical solvers calibrated using in-house experimental results. A separate confinement heterostructure QW design is proposed to enable lasing from tensile strained germanium ($$\varepsilon$$-Ge/In _x Ga _1-x -Ge) in the range of 1.55 um to 4 um wavelengths as a function of QW thickness and indium (In) composition. Different recombination mechanisms were analyzed as a function of tensile strain in $$\varepsilon$$-Ge/In _x Ga _1-x-Ge QW. Minority carrier lifetime and band alignment are key attributes of a QW laser, which were measured using microwave photoconductive decay and x-ray photoelectron spectroscopy (as a function of In composition), respectively. The transition point of Ge to a direct bandgap material is re-affirmed to be at $$\varepsilon$$-Ge/In _x Ga _1-x = 1.6% (In ~24%) and the transition from type I to type II for $$\varepsilon$$-Ge/In _x Ga _1-x-Ge/In _x Ga _1-x As QW is found to be at In ~55%. Also, the transition to a TM mode dominant laser is identified at In ~15%. Using a tunable waveguide design to optimize confinement as a function of In composition, strain, wavelength, QW thickness, refractive index, and geometry, the $$\varepsilon$$-Ge/In _x Ga _1-x-Ge QW laser design provided a net material gain of ~2000 cm^-1 and a threshold current density of ~5 kA/cm², which is an improvement over existing Ge based lasers. In conclusion, the impact of In composition and QW thickness on the band structure, polarized gain spectra, and various lasing metrics were analyzed to show $$\varepsilon$$-Ge/In _x Ga _1-x-Ge/InGaAs QW lasers as promising for integrated photonics.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; National Science Foundation (NSF)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 2222427

Report Number(s):: NREL/JA--5K00-87647; MainId:88422; UUID:50f32898-b833-4451-86f4-078dc312604a; MainAdminId:71152

Journal Information:: IEEE Journal of Selected Topics in Quantum Electronics, Journal Name: IEEE Journal of Selected Topics in Quantum Electronics Journal Issue: 3 Vol. 30; ISSN 1077-260X

Publisher:: IEEE Lasers and Electro-optics SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (41)

Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure Hudait, Mantu K.; Murphy-Armando, Felipe; Saladukha, Dzianis ACS Applied Electronic Materials, Vol. 3, Issue 10 https://doi.org/10.1021/acsaelm.1c00660	journal	October 2021
Theory for n-type doped, tensile-strained Ge–Si_xGe_ySn_1−x−y quantum-well lasers at telecom wavelength Chang, Guo-En; Chang, Shu-Wei; Chuang, Shun L. Optics Express, Vol. 17, Issue 14 https://doi.org/10.1364/oe.17.011246	journal	July 2009
Single-chip microprocessor that communicates directly using light Sun, Chen; Wade, Mark T.; Lee, Yunsup Nature, Vol. 528, Issue 7583 https://doi.org/10.1038/nature16454	journal	December 2015
Gain, refractive index change, and linewidth enhancement factor in broad-area GaAs and InGaAs quantum-well lasers Stohs, J.; Bossert, D. J.; Gallant, D. J. IEEE Journal of Quantum Electronics, Vol. 37, Issue 11 https://doi.org/10.1109/3.958374	journal	January 2001
Design Considerations and Quantum Confinement Effect in Monolithic ε-Ge/In_xGa_1-xAs Nanoscale FinFETs Down to N5 Node Joshi, Rutwik; Karthikeyan, Sengunthar; Hudait, Mantu K. IEEE Transactions on Electron Devices, Vol. 69, Issue 12 https://doi.org/10.1109/ted.2022.3212337	journal	December 2022
Lasing in direct-bandgap GeSn alloy grown on Si Wirths, S.; Geiger, R.; von den Driesch, N. Nature Photonics, Vol. 9, Issue 2 https://doi.org/10.1038/nphoton.2014.321	journal	January 2015
Material Gain Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Light Sources Based on Many-Body Theory Fujisawa, Takeshi; Saitoh, Kunimasa IEEE Journal of Quantum Electronics, Vol. 51, Issue 5 https://doi.org/10.1109/jqe.2015.2410283	journal	May 2015
Satellite-Relayed Intercontinental Quantum Network Liao, Sheng-Kai; Cai, Wen-Qi; Handsteiner, Johannes Physical Review Letters, Vol. 120, Issue 3 https://doi.org/10.1103/physrevlett.120.030501	journal	January 2018
Monolithically Cointegrated Tensile Strained Germanium and In_xGa_1-xAs FinFETs for Tunable CMOS Logic Joshi, Rutwik; Karthikeyan, Sengunthar; Hudait, Mantu K. IEEE Transactions on Electron Devices, Vol. 69, Issue 8 https://doi.org/10.1109/ted.2022.3181112	journal	August 2022
Observation of Squeezed Light in the 2 μ m Region Mansell, Georgia L.; McRae, Terry G.; Altin, Paul A. Physical Review Letters, Vol. 120, Issue 20 https://doi.org/10.1103/physrevlett.120.203603	journal	May 2018
Low-noise mid-IR upconversion detector for improved IR-degenerate four-wave mixing gas sensing Høgstedt, Lasse; Dam, Jeppe Seidelin; Sahlberg, Anna-Lena Optics Letters, Vol. 39, Issue 18 https://doi.org/10.1364/ol.39.005321	journal	September 2014
Impact of minority carrier lifetime on the performance of strained germanium light sources Sukhdeo, David S.; Gupta, Shashank; Saraswat, Krishna C. Optics Communications, Vol. 364 https://doi.org/10.1016/j.optcom.2015.11.060	journal	April 2016
Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure Zhu, Y.; Jain, N.; Vijayaraghavan, S. Journal of Applied Physics, Vol. 112, Issue 9 https://doi.org/10.1063/1.4764880	journal	November 2012
High carrier lifetimes in epitaxial germanium–tin/Al(In)As heterostructures with variable tin compositions Hudait, Mantu K.; Johnston, Steven W.; Clavel, Michael B. Journal of Materials Chemistry C, Vol. 10, Issue 29 https://doi.org/10.1039/d2tc00830k	journal	January 2022
Theoretical analysis of optical gain in uniaxial tensile strained and n^+-doped Ge/GeSi quantum well Jiang, Jialin; Sun, Junqiang Optics Express, Vol. 24, Issue 13 https://doi.org/10.1364/oe.24.014525	journal	June 2016
Tensile-Strained Nanoscale Ge/In _0.16 Ga _0.84 As Heterostructure for Tunnel Field-Effect Transistor Zhu, Yan; Maurya, Deepam; Priya, Shashank ACS Applied Materials & Interfaces, Vol. 6, Issue 7 https://doi.org/10.1021/am405988f	journal	March 2014
Theoretical Analysis of GeSn Alloys as a Gain Medium for a Si-Compatible Laser Dutt, B.; Sukhdeo, D. S. IEEE Journal of Selected Topics in Quantum Electronics, Vol. 19, Issue 5 https://doi.org/10.1109/jstqe.2013.2241397	journal	September 2013
Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110), and (111)A GaAs substrates Hudait, Mantu K.; Zhu, Yan; Jain, Nikhil Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 1 https://doi.org/10.1116/1.4770070	journal	December 2012
Long-distance free-space quantum key distribution in daylight towards inter-satellite communication Liao, Sheng-Kai; Yong, Hai-Lin; Liu, Chang Nature Photonics, Vol. 11, Issue 8 https://doi.org/10.1038/nphoton.2017.116	journal	July 2017
High-speed silicon modulators for the 2 μm wavelength band Cao, Wei; Hagan, David; Thomson, David J. Optica, Vol. 5, Issue 9 https://doi.org/10.1364/optica.5.001055	journal	August 2018
Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy Ghosh, Aheli; Clavel, Michael B.; Nguyen, Peter D. AIP Advances, Vol. 7, Issue 9 https://doi.org/10.1063/1.4993446	journal	September 2017
Analysis of Threshold Current Behavior for Bulk and Quantum-Well Germanium Laser Structures IEEE Journal of Selected Topics in Quantum Electronics, Vol. 19, Issue 4 https://doi.org/10.1109/jstqe.2013.2247573	journal	July 2013
Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers Chang, Guo-En; Chang, Shu-Wei; Chuang, Shun Lien IEEE Journal of Quantum Electronics, Vol. 46, Issue 12 https://doi.org/10.1109/jqe.2010.2059000	journal	December 2010
On-chip optical interconnection using integrated germanium light emitters and photodetectors Tani, Kazuki; Okumura, Tadashi; Oda, Katsuya Optics Express, Vol. 29, Issue 18 https://doi.org/10.1364/oe.432324	journal	August 2021
An electrically pumped germanium laser Camacho-Aguilera, Rodolfo E.; Cai, Yan; Patel, Neil Optics Express, Vol. 20, Issue 10 https://doi.org/10.1364/oe.20.011316	journal	January 2012
Calculation of critical layer thickness versus lattice mismatch for Ge _x Si _{1− x} /Si strained‐layer heterostructures People, R.; Bean, J. C. Applied Physics Letters, Vol. 47, Issue 3 https://doi.org/10.1063/1.96206	journal	August 1985
Filling the Light Pipe Richardson, David J. Science, Vol. 330, Issue 6002 https://doi.org/10.1126/science.1191708	journal	October 2010
Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices Clavel, Michael; Saladukha, Dzianis; Goley, Patrick S. ACS Applied Materials & Interfaces, Vol. 7, Issue 48 https://doi.org/10.1021/acsami.5b07385	journal	November 2015
Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain Carroll, Lee; Friedli, Peter; Neuenschwander, Stefan Physical Review Letters, Vol. 109, Issue 5 https://doi.org/10.1103/physrevlett.109.057402	journal	August 2012
Diode Lasers and Photonic Integrated Circuits Coldren, Larry A.; Corzine, Scott W.; Mašanović, Milan L. John Wiley & Sons, Inc. https://doi.org/10.1002/9781118148167	book	January 2012
Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism El Kurdi, Moustafa; Fishman, Guy; Sauvage, Sébastien Journal of Applied Physics, Vol. 107, Issue 1 https://doi.org/10.1063/1.3279307	journal	January 2010
Simultaneous Measurement of Minority-Carrier Lifetime in Single-Crystal CdTe Using Three Transient Decay Techniques Johnston, Steve; Zaunbrecher, Katherine; Ahrenkiel, Richard IEEE Journal of Photovoltaics, Vol. 4, Issue 5 https://doi.org/10.1109/jphotov.2014.2339491	journal	September 2014
Theory of Optical Gain of ${\hbox {Ge--}}{\hbox {Si}}_{x}{\hbox {Ge}}_{y}{\hbox {Sn}}_{1-x-y}$ Quantum-Well Lasers Chang, Shu-Wei; Chuang, Shun Lien IEEE Journal of Quantum Electronics, Vol. 43, Issue 3 https://doi.org/10.1109/jqe.2006.890401	journal	March 2007
Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform Mączko, H. S.; Kudrawiec, R.; Gladysiewicz, M. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep34082	journal	September 2016
Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors Clavel, Michael; Goley, Patrick; Jain, Nikhil IEEE Journal of the Electron Devices Society, Vol. 3, Issue 3 https://doi.org/10.1109/jeds.2015.2394743	journal	May 2015
Theory of gain, modulation response, and spectral linewidth in AlGaAs quantum well lasers Arakawa, Y.; Yariv, A. IEEE Journal of Quantum Electronics, Vol. 21, Issue 10 https://doi.org/10.1109/jqe.1985.1072555	journal	October 1985
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si Liu, Jifeng; Sun, Xiaochen; Pan, Dong Optics Express, Vol. 15, Issue 18 https://doi.org/10.1364/oe.15.011272	journal	January 2007
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation Mahmudlu, Hatam; Johanning, Robert; van Rees, Albert Nature Photonics, Vol. 17, Issue 6 https://doi.org/10.1038/s41566-023-01193-1	journal	April 2023
Multivalley Electron Conduction at the Indirect-Direct Crossover Point in Highly Tensile-Strained Germanium Clavel, M. B.; Murphy-Armando, F.; Xie, Y. Physical Review Applied, Vol. 18, Issue 6 https://doi.org/10.1103/physrevapplied.18.064083	journal	December 2022
Mid-infrared coincidence measurements on twin photons at room temperature Mancinelli, M.; Trenti, A.; Piccione, S. Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms15184	journal	May 2017
Model for direct-transition gain in a Ge-on-Si laser Chow, Weng W. Applied Physics Letters, Vol. 100, Issue 19 https://doi.org/10.1063/1.4714540	journal	May 2012

Similar Records

Improving the performance of strained InGaAs/AlGaAs single quantum well lasers

Journal Article · 1990 · Applied Physics Letters; (USA) · OSTI ID:7030012

Bour, D P; Martinelli, R U; Hawrylo, F Z; +3 more

The effects of interdiffusion on the subbands in Ga{sub x}In{sub 1{minus}x}N{sub 0.04}As{sub 0.96}/GaAs quantum well for 1.3 and 1.55 {mu}m operation wavelengths

Journal Article · 2001 · Journal of Applied Physics · OSTI ID:40204351

Chan, Michael C. Y.; Surya, Charles; Wai, P K. A.

Measurements of the polarization dependent of the gain of strained multiple quantum well InGaAs-InP lasers

Journal Article · 1991 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:5150042

Tanbun-Ek, T; Olsson, N A; Logan, R A; +2 more

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
97 MATHEMATICS AND COMPUTING
InGaAs
monolithically integrated light source
quantum well laser
tensile strained germanium

Title: Monolithically Integrated $$\varepsilon$$-Ge/InxGa1-xAs Quantum Well Laser Design: Experimental and Theoretical Investigation

Citation Formats

References (41)

Similar Records

Related Subjects

Title: Monolithically Integrated $$\varepsilon$$-Ge/In_xGa_1-xAs Quantum Well Laser Design: Experimental and Theoretical Investigation