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Title: Stability and synthesis across barium tin sulfide material space

Journal Article · · Journal of Materials Chemistry. A
DOI: https://doi.org/10.1039/d3ta04431a · OSTI ID:2205358
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]
  1. University of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Materials Sciences Division; National Renewable Energy Laboratory (NREL), Golden, CO (United States); University of Washington, Seattle, WA (United States)
  2. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Materials Sciences Division; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Molecular Foundry; University of California, Berkeley, CA (United States)
  3. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
+ Show Author Affiliations

Barium tin sulfide (Ba–Sn–S) is a ternary phase space with interesting material candidates for optoelectronic and thermoelectric applications, yet its properties have not been explored in-depth experimentally, and no thin films have been synthesized. This study uses combinatorial sputtering and theoretical calculations to survey the phase space of Ba–Sn–S materials. We experimentally find that at deposition temperatures up to 600 °C, phases of rocksalt-derived BaS structures (Fm$$\overline{3}$$m), layered SnS derived structures (Aem2), and heavily distorted rocksalt solid solutions (possibly P121/m) dominate phase space, with amorphous films crystallizing in the middle of the composition space (Sn=Ba). Upon annealing with a capping layer, ternary phases of Ba2SnS4 (Pna21) and Ba7Sn5S15 (P63cm) are observed. However the theoretically predicted 0 K thermodynamically stable phase of BaSnS2 (P21/c) does not crystallize. These differences are explained with temperature-dependent computed phase diagrams, which show that BaSnS2 becomes unstable at high temperatures while Ba2SnS4 (Pna21) becomes stabilized. Lastly, we compute electronic and optical absorption properties of selected observed and predicted Ba–Sn–S phases, showing band gaps ranging from 1.67–2.5 eV, electron effective masses from 0.5–1 m0, and hole effective masses from 0.6–1.3 m0. These findings motivate future research into materials within this chemical space for solar energy harvesting and other semiconductor applications.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); National Science Foundation (NSF); USDOE
Grant/Contract Number:
AC36-08GO28308; SC0021266; AC02-05-CH11231; AC02-76SF00515; DGE1106400; DGE175814
OSTI ID:
2205358
Alternate ID(s):
OSTI ID: 2229350
Report Number(s):
NREL/JA-5K00-88000; MainId:88775; UUID:bb525e8e-c21e-45a8-ae52-6d65a62b34ea; MainAdminID:71028
Journal Information:
Journal of Materials Chemistry. A, Vol. 11, Issue 45; ISSN 2050-7488
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
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