Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs

Isukapati, Sundar Babu; Zhang, Hua; Liu, Tianshi; Gupta, Utsav; Ashik, Emran; J Morgan, Adam; Jang, Seung Yup; Lee, Bongmook; Sung, Woongje; Fayed, Ayman; Agarwal, Anant K.

doi:10.1016/j.mssp.2023.107921

Title: Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs

Journal Article · 31 December 2023 · Materials Science in Semiconductor Processing

DOI: https://doi.org/10.1016/j.mssp.2023.107921 · OSTI ID:2204784

; Zhang, Hua; Liu, Tianshi; Gupta, Utsav; Ashik, Emran; J Morgan, Adam; Jang, Seung Yup; Lee, Bongmook; Sung, Woongje; Fayed, Ayman; Agarwal, Anant K.

Not Available

View Journal Article

Cite

Export

Save

Research Organization:: State Univ. of New York (SUNY), Albany, NY (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0001028

OSTI ID:: 2204784

Journal Information:: Materials Science in Semiconductor Processing, Journal Name: Materials Science in Semiconductor Processing Journal Issue: C Vol. 169; ISSN 1369-8001

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

References (21)

Design of a novel triple reduced surface field LDMOS with partial linear variable doping n-type top layer Qiao, Ming; Li, Chengzhou; Liu, Yihe Superlattices and Microstructures, Vol. 93 https://doi.org/10.1016/j.spmi.2016.03.038	journal	May 2016
Demonstration and analysis of a 600 V, 10 A, 4H-SiC lateral single RESURF MOSFET for power ICs applications Yun, Nick; Lynch, Justin; Sung, Woongje Applied Physics Letters, Vol. 114, Issue 19 https://doi.org/10.1063/1.5094407	journal	May 2019
Silicon carbide high-power devices Weitzel, C. E.; Palmour, J. W.; Carter, C. H. IEEE Transactions on Electron Devices, Vol. 43, Issue 10 https://doi.org/10.1109/16.536819	journal	January 1996
Improved high-voltage lateral RESURF MOSFETs in 4H-SiC Banerjee, S.; Chatty, K.; Chow, T. P. IEEE Electron Device Letters, Vol. 22, Issue 5 https://doi.org/10.1109/55.919231	journal	May 2001
High-temperature electronics - a role for wide bandgap semiconductors? Neudeck, P. G.; Okojie, R. S. Proceedings of the IEEE, Vol. 90, Issue 6 https://doi.org/10.1109/JPROC.2002.1021571	journal	June 2002
1300-V 6H-SiC lateral MOSFETs with two RESURF zones Banerjee, S.; Chow, T. P.; Gutmann, R. J. IEEE Electron Device Letters, Vol. 23, Issue 10 https://doi.org/10.1109/LED.2002.803768	journal	October 2002
930-V 170-m$Omega cdot hbox cm^2$Lateral Two-Zone RESURF MOSFETs in 4H-SiC With NO Annealing Wang, W.; Banerjee, S.; Chow, T. P. IEEE Electron Device Letters, Vol. 25, Issue 4 https://doi.org/10.1109/LED.2004.825196	journal	April 2004
Lateral RESURF MOSFET Fabricated on 4H-SiC$(000bar1)$C-Face Okamoto, M.; Suzuki, S.; Kato, M. IEEE Electron Device Letters, Vol. 25, Issue 6 https://doi.org/10.1109/LED.2004.828970	journal	June 2004
1580-V–40-$\hbox{m}\Omega\cdot \hbox{cm}^{2}$ Double-RESURF MOSFETs on 4H-SiC$(\hbox{000}\bar{\hbox{1}})$ Noborio, M.; Suda, J.; Kimoto, T. IEEE Electron Device Letters, Vol. 30, Issue 8 https://doi.org/10.1109/LED.2009.2023540	journal	August 2009
Demonstration of 3500-V 4H-SiC Lateral MOSFETs Lee, Wen-Shan; Lin, Cheng-Wei; Yang, Ming-Hsien IEEE Electron Device Letters, Vol. 32, Issue 3 https://doi.org/10.1109/LED.2010.2101041	journal	March 2011
Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface IEEE Transactions on Electron Devices, Vol. 50, Issue 7 https://doi.org/10.1109/TED.2003.814974	journal	July 2003
On the Specific On-Resistance of High-Voltage and Power Devices Zingg, R. P. IEEE Transactions on Electron Devices, Vol. 51, Issue 3 https://doi.org/10.1109/TED.2003.822948	journal	March 2004
4H–SiC Lateral Double RESURF MOSFETs With Low on Resistance Noborio, Masato; Suda, Jun; Kimoto, Tsunenobu IEEE Transactions on Electron Devices, Vol. 54, Issue 5 https://doi.org/10.1109/TED.2007.894249	journal	May 2007
RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC WeiBe, J.; Matthus, C.; Schlichting, H. IEEE Transactions on Electron Devices, Vol. 67, Issue 8 https://doi.org/10.1109/TED.2020.3002730	journal	August 2020
Design and Fabrication Approaches of 400–600 V 4H-SiC Lateral MOSFETs for Emerging Power ICs Application Yun, Nick; Sung, Woongje IEEE Transactions on Electron Devices, Vol. 67, Issue 11 https://doi.org/10.1109/TED.2020.3027652	journal	November 2020
Review of Silicon Carbide Power Devices and Their Applications She, Xu; Huang, Alex Q.; Lucia, Oscar IEEE Transactions on Industrial Electronics, Vol. 64, Issue 10 https://doi.org/10.1109/TIE.2017.2652401	journal	October 2017
Power Conversion With SiC Devices at Extremely High Ambient Temperatures Funaki, Tsuyoshi; Balda, Juan Carlos; Junghans, Jeremy IEEE Transactions on Power Electronics, Vol. 22, Issue 4 https://doi.org/10.1109/TPEL.2007.900561	journal	July 2007
Review of Silicon Power Semiconductor Technologies for Power Supply on Chip and Power Supply in Package Applications Disney, Don; Shen, Z. John IEEE Transactions on Power Electronics, Vol. 28, Issue 9 https://doi.org/10.1109/TPEL.2013.2242095	journal	September 2013
4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure Suzuki, Seiji; Harada, Shinsuke; Yatsuo, Tsutomu Materials Science Forum, Vol. 433-436 https://doi.org/10.4028/www.scientific.net/MSF.433-436.753	journal	September 2003
Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation Albrecht, Matthaeus; Erlbacher, Tobias; Bauer, Anton Materials Science Forum, Vol. 963 https://doi.org/10.4028/www.scientific.net/MSF.963.827	journal	July 2019
Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer Kim, Hyoung Woo; Seok, Ogyun; Moon, Jeong Hyun Japanese Journal of Applied Physics, Vol. 56, Issue 12 https://doi.org/10.7567/JJAP.56.120305	journal	November 2017

Similar Records

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

Journal Article · 2021 · IEEE Journal of the Electron Devices Society · OSTI ID:1845907

Liu, Tianshi; Zhang, Hua; Isukapati, Sundar Babu; +7 more

Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology

Conference · 2021 · 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) · OSTI ID:1825459

Isukapati, Sundar Babu; Zhang, Hua; Liu, Tianshi; +6 more

SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology

Journal Article · 2021 · IEEE Journal of the Electron Devices Society · OSTI ID:1980394

Liu, Tianshi; Zhang, Hua; Isukapati, Sundar Babu; +7 more

Related Subjects

Engineering
Materials Science
Physics

Title: Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs

Citation Formats

References (21)

Similar Records

Related Subjects